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Details, datasheet, quote on part number:KSC2688
 
 
Part:KSC2688
Category:Discrete => Transistors => Bipolar => Switching => NPN
Description:NPN Epitaxial Silicon Transistor
Company:Fairchild Semiconductor
Datasheet:Download KSC2688 datasheet   File size : 34 kB
Request For quote:  Find where to buy KSC2688
 



Datasheet text preview:
KSC2688
K S C 2 6 88
Color TV Chroma Output & Video Output
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC PC TJ TSTG Par a m e ter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 300 300 5 200 1.25 10 150 - 55 ~ 150 Units V V V mA W W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hF E VCE(sat) fT C re Param eter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Feed Back Capacitance Test Condition IC =0.1mA, IE = 0 IC = 5mA, IB = 0, RBE = IE = 0.1mA, IC = 0 VCB = 200V, IE = 0 VEB = 4V, IC = 0 VCE = 10V, IC = 10mA IC = 50mA, IB = 5mA VCE = 30V, IE = -10mA VCB = 30V, IE = 0 f = 1MHz 50 80 3 40 Min. 300 300 5 100 100 250 1.5 V M Hz pF Typ. M ax. Units V V V µA µA
* Pulse Test: PW350µs, Duty Cycle2%
hFE Classificntion
Classification hF E R 40 ~ 80 O 60 ~ 120 Y 100 ~ 200 G 160 ~ 250
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2688
Typical Characteristics
100
16
IE = 0 f=1MHz
14
PC[W], POWER DERATING
Cre[pF], CAPACITANCE
12 10 8 6 4 2 0
10
1
1
10
100
0
25
50
o
75
100
125
150
175
VCB[V], COLLECTOR-BASE VOLTAGE
TC[ C ], CASE TEMPERATURE
Figure 1. Feedback Capacitance
Figure 2. Power Derating
2.00 1.75
PC[W], POWER DERATING
1.50 1.25 1.00 0.75 0.50 0.25 0.00
0
25
o
50
75
100
125
150
175
Ta[ C], AMBIENT TEMPERATURE
Figure 3. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2688
Package Demensions
TO-126
±0.10
3.90
8.00 ±0.30
3.25 ±0.20
14.20MAX
ø3.20 ±0.10
11.00
±0.20
(1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10
±0.30
(0.50) 1.75 ±0.20
#1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20]
13.06
16.10
±0.20
0.50 ­0.05
+0.10
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000