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Details, datasheet, quote on part number:KSC2690A
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| Part: | KSC2690A |
| Category: | Discrete => Transistors => Bipolar => Audio Amplifier Application => NPN |
| Description: | NPN Epitaxial Silicon Transistor |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download KSC2690A datasheet File size : 52 kB |
| Request For quote: | Find where to buy KSC2690A
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Datasheet text preview:
KSC2690/2690A
KSC269 0/2690A
Audio Frequency High Frequency Power Amplifier
· Complement to KSA1220/KSA1220A
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Par a m e t e r Collector-Base Voltage : KSC2690 : KSC2690A Collector- Emitter Voltage : KSC2690 : KSC2690A Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current(DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 120 160 120 160 5 1.2 2.5 0.3 1.2 20 150 - 55 ~ 150 V V V V V A A A W W °C °C Value U n i ts
VCEO
VEBO IC ICP IB PC PC TJ TSTG
* PW10ms, Duty Cycle50%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Co b Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB = 120V, IE = 0 VEB = 3V, IC= 0 VCE = 5V, IC = 5mA VCE = 5V, IC = 0.3A IC = 1A, IB = 0.2A IC = 1A, IB = 0.2A VCE = 5V, IC = 0.2A VCB =10V, IE =0, f = 1MHz 35 60 105 140 0. 4 1 155 19 Min. Typ. Ma x . 1 1 320 0.7 1.3 V V MH z pF Units µA µA
* Pulse Test: PW350µs, Duty Cycle2% Pulsed
hFE Classificntion
Classification hFE2 R 60 ~ 120 O 100 ~ 200 Y 160 ~ 320
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2690/2690A
Typical Characteristics
1.6
1000
Pulse Test
1.4
VCE = 5V Pulse Test
IC[A], COLLECTOR CURRENT
hFE, DC CURRENT GAIN
70 80
1.2 1.0 0.8 0.6 0.4 0.2 0.0
IB=10mA IB=9mA IB=8mA IB=7mA IB=6mA IB=5mA IB=4mA IB=3mA IB=2mA IB=1mA IB=0mA
0 10 20 30 40 50 60
100
10
1 10 - 1 0.E03
0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
10 00
IC = 5 I B Pulse Test
VBE (sat)
f = 1MHz IE = 0
1
Cob[pF], CAPACITANCE
10 0
0 .1
10
VCE (sat)
0 .0 1 1 E -3
0 .0 1
0 .1
1
10
1
1
10
10 0
10 00
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
10 00
10
IC[A], COLLECTOR CURRENT
VC E = 5V Pulse Test
IC(max) Pulse
PW
m 10 s
10 0
1
IC(max) DC
= 10
1m s
Dis sip Lim ation ited
s 0u
s) m 50 = t ed i W (P Lim DC S/b
10
0 .1
KSC2690 VCEO MAX
0 .0 1 1 10 100
KSC2690A VCEO MAX
1000
1 0 .0 1
0 .1
1
IC[A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Current Gain Bandwidth Product
Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2690/2690A
Typical Characteristics (Continued)
16 0 14 0 12 0
32 28
PC[W], POWER DISSIPATION
15 0 17 5
24 20 16 12 8 4 0
dT[%], IC DERATING
10 0 80 60 40 20 0
S/b
Di ss
Lim ited
tio n
ipa
Lim ite
d
0
25
50
o
75
10 0
12 5
0
25
50
o
75
1 00
1 25
1 50
1 75
TC[ C], CASE TEMPERATURE
TC[ C], CASE TEMPERATURE
Figure 7. Derating Curve of Safe Operating Areas
Figure 8. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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