|
Details, datasheet, quote on part number:KSC2710
| |
| Part: | KSC2710 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => NPN => Epitaxial |
| Description: | NPN Epitaxial Silicon Transistor |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download KSC2710 datasheet File size : 42 kB |
| Request For quote: | Find where to buy KSC2710
|
| |
Datasheet text preview:
KSC2710
K S C 2 7 10
Low Frequency Power Amplifier
· Complement to KSA1150 · Collector Dissipation : PC=300mW
1
TO-92S
1.Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 20 5 500 300 150 -55 ~ 150 U n i ts V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) P a r a m e te r Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC=100µA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 VCE=1V, IC=0.1A IC=0.5A, IB=50mA 40 0. 18 Min. 40 20 5 0.1 0.1 400 0. 4 V Typ. M ax. Units V V V µA µA
hFE Classification
Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2710
Typical Characteristics
500
1 000
IB = 2.0mA
VC E=1V
IC[mA], COLLECTOR CURRENT
400
IB = 1.8mA
hFE, DC CURRENT GAIN
IB = 1.6mA
300
IB = 1.4mA IB = 1.2mA
1 00
200
IB = 1.0mA IB = 0.8mA IB = 0.6mA
10
100
IB = 0.4mA IB = 0.2mA
0
1 0 2 4 6 8 10
1
10
1 00
1 000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
100
IC =10IB
VC E = 1V
1
IC[mA], COLLECTOR CURRENT
100 1000
V BE(sat)
10
0 .1
V CE(sat)
1
0 .0 1
1
10
0 .1 0 .0
0 .2
0 .4
0 .6
0 .8
1 .0
1 .2
IC[m A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
1 00
f = 1MHz IE = 0
Cob[pF], CAPACITANCE
10
1
1
10
1 00
V CB[V], COLLECTOR BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2710
Package Dimensions
TO-92S
4.00 ±0.20 2.31 ±0.20
0.66 MAX.
(1.10)
0.49 ±0.10
1.27TYP [1.27±0.20] 3.72 ±0.20
1.27TYP [1.27±0.20]
14.47 ±0.30
3.70 ±0.20
0.35 0.05
+0.10
2.86 ±0.20
0.77 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
|
|
