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Details, datasheet, quote on part number:KSC2715
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| Part: | KSC2715 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => NPN => Epitaxial |
| Description: | NPN Epitaxial Silicon Transistor |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download KSC2715 datasheet File size : 61 kB |
| Request For quote: | Find where to buy KSC2715
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Datasheet text preview:
KSC2715
K S C 2 7 15
FM RADIO AMP, MIX, CONV, OSC, IF AMP
3
2 1
S O T -2 3
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Par a m e t e r Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 35 30 4 50 150 150 -55 ~ 150 U n i ts V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol ICBO IEBO hFE VCE (sat) VBE (on) fT Co b P a r a m e te r Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB=35V, IE=0 VEB=4V, IC=0 VCE=12V, IC=2mA IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz 1 00 2 40 Min. Typ. M ax. 0.1 1 240 0.4 1.0 400 3. 2 V V MHz pF Units µA µA
hFE Classification
Classification hF E R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240
M a r ki n g
B1O
hFE grade
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2715
Typical Characteristics
10
IB = 90µA IB = 80µA
1 000
VC E=12V
IC[mA], COLLECTOR CURRENT
8
6
IB = 60µA IB = 50µA
hFE, DC CURRENT GAIN
IB = 70µA
1 00
4
IB = 40µA IB = 30µA
2
IB = 20µA IB = 10µA
0
0
2
4
6
8
10
10 0 .1
1
10
1 00
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
32
IC =10IB
28
VC E=12V
IC[mA], COLLECTOR CURRENT
10
24 20 16 12 8 4 0 0 .0
1
VBE(sat)
0 .1
V CE(sat)
0 .0 1 0 .1
1
0 .2
0 .4
0 .6
0 .8
1 .0
1 .2
IC[m A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1 000
f = 1MHz IE=0
VC E = 10V
Cob[pF], CAPACITANCE
1
1 00
0.1
10
1
10
100
1
10
VCB[V], COLLECTOR BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2715
Package Dimensions
SOT-23
0.20 MIN 2.40
±0.10
0.40 ±0.03
1.30
±0.10
0.45~0.60
0.03~0.10 0.38 REF
0.40 ±0.03 0.96~1.14 2.90 ±0.10
0.12 0.023
+0.05
0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF
0.97REF
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
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