|
|
Part: KSD1691
Category:
Discrete
-> Transistors
-> Bipolar
-> Switching
-> NPN
Description: NPN Epitaxial Silicon Transistor
Company: Fairchild Semiconductor
Datasheet: Download KSD1691 datasheet File size : 188 kB
Request For quote: Find where to buy KSD1691
Datasheet text preview:
KSD1691
K S D 1 6 91
Feature
· Low Collector-Emtter Saturation Voltage & Large Collector Current · High Power Dissipation: PC = 1.3W (Ta=25°C) · Complementary to KSB1151
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Par a m e ter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 60 60 7 5 8 1 1. 3 20 150 - 55 ~ 150 Units V V V A A A W W °C °C
* PW10ms, duty Cycle50%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector Cut-off Current Emitter Cut-off Current *DC Current Gain Test Condition VCB = 50V, IE = 0 VEB = 7V, IC = 0 VCE = 1V, IC = 0.1A VCE = 1V, IC = 2A VCE = 1V, IC = 5A IC = 2A, IB = 0.2A IC = 2A, IB = 0.2A VCC = 10V, IC = 2A IB1 = - IB2 = 0.2A RL = 5 60 100 50 0.1 0.9 0.2 1.1 0.2 Mi n . Typ. Ma x . 10 10 400 0.3 1.2 1 2. 5 1 V V µs µs µs Units µA µA
*Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time
* Pulse test: PW50µs, duty Cycle2% Pulsed
hFE Classificntion
Classification hFE 2 O 100 ~ 200 Y 160 ~ 320 G 200 ~ 400
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD1691
Typical Characteristics
10
1 000
Ic[A], COLLECTOR CURRENT
IB = 20 IB = 0mA 15 0m A
8
IB = 60mA
hFE, DC CURRENT GAIN
00m IB = 1
A
VC E = 2V
IB = 80mA
1 00
V C E = 1V
6
0 mA IB = 4 = 30mA I
B
4
IB = 20mA
10
2
IB = 10mA
0
IB = 0
0 .4 0 .8 1 .2 1 .6 2 .0
1 0 .0 1
0 .1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A ], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
10
Ic = 10 IB
Ic(Pulse)MA X
IC[A], COLLECTOR CURRENT
Ic(DC)M AX
2m S
10 S m
D is
20
m S Li 0m o n ti
pa si
1
V BE(sat)
ite
1
d
b s/
0 .1
0 .0 1
0 .1 0 .1 1 10
1
10
VCEO(MAX)
100
ite m Li d
V
CE
(s a
t)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
Figure 4. Forward Bias Safe Operating Area
10
16 0 14 0
IC[A], COLLECTOR CURRENT
8
12 0
dT[%], Ic DERATING
6
10 0 80 60 40 20 0
s/b
DI
4
LIM
VCEO(SUS)
SS IP A
ITE D
TI O
2
N
LI
M IT ED
0
20
40
60
80
1 00
0
25
50
o
75
10 0
12 5
15 0
17 5
20 0
V CE[V ], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 5. Reverse Bias Safe Operating Area
Figure 6. Derating Curve of Safe Operating Areas
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD1691
Typical Characteristics (Continued)
30
25
PC[W], POWER DISSIPATION
20
15
10
5
0
25
50
o
75
1 00
1 25
1 50
1 75
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Others parts begin by ks
KS-1 KS-2 KS-3 KS-4 KS-5 KS-6 KS-7 KS-8
|
|
|
