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Part: KSD1692
Category:
Discrete
-> Transistors
-> Bipolar
-> Darlington
-> NPN
Description: NPN Silicon Darlington Transistor
Company: Fairchild Semiconductor
Datasheet: Download KSD1692 datasheet File size : 188 kB
Request For quote: Find where to buy KSD1692
Datasheet text preview:
KSD1692
K S D 1 6 92
Feature
· · · · High Dc Durrent Gain Low Collector Saturation Voltage Built-in a Damper Diode at E-C High Power Dissipation : PC = 1.3W (Ta=25°C)
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Sym bol VCBO VCEO VEBO IC ICP PC PC TJ TSTG P arameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 150 100 8 3 5 1.3 15 150 - 55 ~ 150 Units V V V A A A W W °C
* PW10ms, duty Cycle50%
Electrical Characteristics TC=25°C unless otherwise noted
S ymb o l ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector Cut-off Current Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition VCB = 100V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 1.5A VCE = 2V, IC = 3A IC = 1.5A, IB = 1.5mA IC = 1.5A, IB = 1.5mA VCC = 40V, IC = 1.5A IB1 = - IB2 = 1.5mA RL = 27 2K 1K 0. 9 1.5 0.5 2 1 Min. Typ. Ma x . 10 2 20K 1.2 2 V V µs µs µs Units µA mA
* Pulse test: PW350µs, duty Cycle2% Pulsed
hFE Classificntion
Classification hFE1 O 2000 ~ 5000 Y 4000 ~ 12000 G 6000 ~ 20000
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD1692
Typical Characteristics
5
10 0000
Ic[A], COLLECTOR CURRENT
4
IB = 200u
A
hFE, DC CURRENT GAIN
3
IB = 450uA IB = 400uA IB = 350uA IB = 300uA IB = 250uA
00uA IB = 5
VC E = 2V Pulsed
10 000
IB = 150uA
IB = 100uA
2
10 00
1
IB = 50uA
0
0
1
2
3
4
5
10 0 0. 01
0. 1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10 0
10
Ic = 1000 IB P u ls e d
Ic(Pulse) Ic(DC)
IC[A], COLLECTOR CURRENT
Dis s
1
ipa
tio
m 20 0m s s
10
s 0u 10 us 0 30 s 1m
10
nL
im ite d
s/b Lim
V BE(sat)
1
ite d
0 .1
V CE(sat)
0. 1
0. 1
1
10
0 .0 1
Tc =25 C Single Pulse
1 10 100 500
o
IC[A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
Figure 4. Forward Bias Safe Operating Areas
16 0 14 0
20
PC[W], POWER DISSIPATION
12 0
15
dT[%], Ic DERATING
10 0 80 60 40 20 0
s/b
DI
10
LIM
SS IP A
ITE D
TI O
N
5
LI
M IT ED
0 25 50
o
75
10 0
12 5
15 0
17 5
20 0
0
25
50
o
75
1 00
1 25
1 50
1 75
TC[ C], CASE TEMPERATURE
TC[ C], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Areas
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD1692
Package Demensions
TO-126
±0.10
3.90
8.00 ±0.30
3.25 ±0.20
14.20MAX
ø3.20 ±0.10
11.00
±0.20
(1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10
±0.30
(0.50) 1.75 ±0.20
#1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20]
13.06
16.10
±0.20
0.50 0.05
+0.10
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
Others parts begin by ks
KS-1 KS-2 KS-3 KS-4 KS-5 KS-6 KS-7 KS-8
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