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Part: KSD1943
Category:
Discrete
-> Transistors
-> Bipolar
-> Switching
-> NPN
Description: NPN Epitaxial Silicon Transistor
Company: Fairchild Semiconductor
Datasheet: Download KSD1943 datasheet File size : 188 kB
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Datasheet text preview:
KSD1943
K S D 1 9 43
High Power Transistor
1
TO-220 2.Collector 3.Emitter
1. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Par a m e ter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 80 60 8 3 40 150 - 55 ~ 150 Units V V V A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCEO ICBO IEBO hF E VBE(sat) VCE(sat) Paramet er Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Test Condition IC = 25mA, IB = 0 VCB = 80V, IE = 0 VEB = 8V, IC = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A IC = 2A, IB = 0.05A 400 Min. 60 M ax. 100 10 2000 1.5 1 V V Units V µA µA
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD1943
Typical Characteristics
2 .0 1 .8
10 000
V C E = 4V
Ic[A], COLLECTOR CURRENT
1 .6 1 .4 1 .2 1 .0 0 .8 0 .6 0 .4 0 .2
IB = 1.2mA IB = 1mA IB = 0.8mA IB = 0.6mA IB = 0.4mA IB = 0.2mA
hFE, DC CURRENT GAIN
10 00
10 0
0
1
2
3
4
5
6
7
8
9
10
10 0. 01
0. 1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC [A ], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
10
Ic = 40 IB
IC[A], COLLECTOR CURRENT
I C M A X (D C )
DC
1
V BE(sat)
1
0 .1
V CE(sat)
0 .0 1
0 .1 0 .1 1 10
1
10
100
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Safe Operating Area
40 35
PC[W], POWER DISSIPATION
30 25 20 15 10 5 0
25
50
o
75
1 00
1 25
1 50
1 75
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD1943
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.60 ±0.10
(1.70)
1.30 0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45° )
0.50 0.05
+0.10
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
Others parts begin by ks
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