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Part: KSD227
Category:
Discrete
-> Transistors
-> Bipolar
-> Switching
-> NPN
Description: NPN Epitaxial Silicon Transistor
Company: Fairchild Semiconductor
Datasheet: Download KSD227 datasheet File size : 313 kB
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Datasheet text preview:
KSD227
KSD22 7
Low Frequency Power Amplifier
· Complement to KSA642 · Collector Power Dissipation : PC=400mW
1
T O -9 2
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 30 25 5 300 400 150 -55 ~ 150 U n i ts V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC=100µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 VCE=1V, IC=50mA IC=300mA, IB=30mA 70 0.14 Min. 30 25 5 0.1 0.1 400 0. 4 V Typ. Ma x . Units V V V µA µA
hFE Classification
Classification hFE O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSD227
Typical Characteristics
50 45
IB = 450µA IB = 400µA
1 000
VC E = 1V
IC[mA], COLLECTOR CURRENT
40 35 30 25 20 15 10 5 0
IB = 300µA IB = 250µA IB = 200µA IB = 150µA IB = 100µA IB = 50µA
0 1 2 3 4 5 6 7 8 9 10
hFE, DC CURRENT GAIN
IB = 350µA
1 00
10 1
10
1 00
1 000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[m A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
100
IC = 10 IB
VCE = 1V
IC[mA], COLLECTOR CURRENT
10 100
80
1
V BE(sat)
60
40
0 .1
V CE(sat)
20
0 .0 1 0 .1
1
0 .0
0 .2
0 .4
0 .6
0 .8
1 .0
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
20
IE = 0 f = 1MHz
1000
VCE = 5V
10
Cob [pF], CAPACITANCE
100
1
1
10
100
300
10
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSD227
Package Dimensions
TO-92
4.58 0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Others parts begin by ks
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