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Part: KSD261
Category:
Discrete
-> Transistors
-> Bipolar
-> Switching
-> NPN
Description: NPN Epitaxial Silicon Transistor
Company: Fairchild Semiconductor
Datasheet: Download KSD261 datasheet File size : 311 kB
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Datasheet text preview:
KSD261
KSD26 1
Low Frequency Power Amplifier
· Complement to KSA643 · Collector Power Dissipation : PC=500mW · Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base)
1
T O -9 2
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 20 5 500 500 150 -55 ~ 150 U n i ts V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC=100µA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 VCE=1V, IC=0.1A IC=0.5A, IB=50mA 40 0.18 Min. 40 20 5 0.1 0.1 400 0. 4 V Typ. Ma x . Units V V V µA µA
hFE Classification
Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KSD261
Typical Characteristics
500 450
1000
IB = 2.0mA IB = 1.8mA
VC E = 1V
IC[mA], COLLECTOR CURRENT
400 350 300 250 200 150 100 50 0
IB = 1.4mA IB = 1.2mA IB = 1.0mA IB = 0.8mA IB = 0.6mA IB = 0.4mA IB = 0.2mA
0 1 2 3 4 5 6 7 8 9 10
hFE, DC CURRENT GAIN
IB = 1.6mA
100
10
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[m A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
100
IC = 10 IB
VCE = 1V
1
V BE(sat)
IC[mA], COLLECTOR CURRENT
100 1000
10
0 .1
1
VCE(sat)
0 .0 1
1
10
0 .1 0 .0
0 .2
0 .4
0 .6
0 .8
1 .0
1 .2
IC[m A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
IE = 0 f = 1MHz
Cob [pF], CAPACITANCE
10
1
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KSD261
Package Dimensions
TO-92
4.58 0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Others parts begin by ks
KS-1 KS-2 KS-3 KS-4 KS-5 KS-6 KS-7 KS-8
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