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Part: KSD362
Category:
Discrete
-> Transistors
-> Bipolar
-> Switching
-> NPN
Description: NPN Epitaxial Silicon Transistor
Company: Fairchild Semiconductor
Datasheet: Download KSD362 datasheet File size : 311 kB
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Datasheet text preview:
KSD362
KSD36 2
B/W TV Horizontal Deflection Output
· Collector-Base Voltage : VCBO=150V · Collector Current : IC=5A · Collector Dissipation : PC=40W(TC=25°C)
1
TO-220 2.Collector 3.Emitter
1. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Par a m e ter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 150 70 8 5 40 150 - 55 ~ 150 Units V V V A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hF E VCE(sat) VBE(sat) fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Test Condition IC = 1mA, IE = 0 IC = 2mA, RBE = IE = 1mA, IC = 0 VCB = 100V, IE = 0 VCE = 5V, IC = 5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A VCE = 5V, IC = 0.5A 10 20 Min. 150 70 8 20 140 1 1.5 V V M Hz Typ. M ax. Units V V V µA
hFE Classification
Classification hF E N 20 ~ 50 R 40 ~ 80 O 70 ~ 140
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD362
Typical Characteristics
5
10 000
VC E = 5V
IC[A], COLLECTOR CURRENT
4
hFE, DC CURRENT GAIN
3
IB = 50mA IB = 45mA IB = 40mA IB = 35mA IB = 30mA IB = 25mA IB = 20mA IB = 15mA
10 00
2
10 0
1
IB = 10mA IB = 5mA
0
0
4
8
12
16
20
10 0. 01
0. 1
1
10
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
1 000
IC = 10 IB
1
V BE(sat)
Cob[pF], CAPACITANCE
1 10
1 00
0 .1
VCE (sat)
0 .0 1 0 .0 1
0 .1
10 1 10 1 00
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
10
80 70
IC[A], COLLECTOR CURRENT
Thermal lim itation *200ms
1
*10ms S/B limitation
PC[W], POWER DISSIPATION
60 50 40 30 20 10 0
S/B limitation
1. Tc=25 2. *single pulse
0 .1 10 100
0
25
50
o
75
1 00
1 25
1 50
1 75
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD362
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.60 ±0.10
(1.70)
1.30 0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45° )
0.50 0.05
+0.10
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
Others parts begin by ks
KS-1 KS-2 KS-3 KS-4 KS-5 KS-6 KS-7 KS-8
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