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Part: KSD363
Category:
Discrete
-> Transistors
-> Bipolar
-> Switching
-> NPN
Description: NPN Epitaxial Silicon Transistor
Company: Fairchild Semiconductor
Datasheet: Download KSD363 datasheet File size : 311 kB
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Datasheet text preview:
KSD363
KSD36 3
B/W TV Horizontal Deflection Output
· Collector-Base Voltage : VCBO=300V · Collector Current : IC=6A · Collector Dissipation : PC=40W(TC=25°C) TO-220 2.Collector 3.Emitter
1
1. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Par a m e ter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 300 120 8 6 40 150 - 55 ~ 150 Units V V V A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hF E VCE(sat) VBE(sat) fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Test Condition IC =1mA, IE = 0 IC = 20mA, IB = 0 IE = 1mA, IC = 0 VCB = 250V, IE = 0 VCE = 5V, IC = 1A IC = 1A, IB = 0.1A IC = 1A, IB = 0.1A VCE = 5V, IC = 0.5A 10 40 Min. 300 120 8 1 240 1 1.5 V V M Hz Typ. M ax. Units V V V mA
hFE Classification
Classification h FE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD363
Typical Characteristics
5
1 000
IC[A], COLLECTOR CURRENT
4
3
IB = 25mA
2
hFE, DC CURRENT GAIN
IB = 50mA IB = 45mA IB = 40mA IB = 35mA IB = 30mA IB = 20mA IB = 15mA
VC E = 5V
1 00
1
IB = 10mA IB = 5mA
0
0
4
8
12
16
20
10 0 .0 1
0 .1
1
10
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
1 000
IC = 10 IB
f=1MHz IE = 0
1
V BE(sat)
Cob[pF], CAPACITANCE
1 10
1 00
0 .1
VCE (sat)
0 .0 1 0 .0 1
0 .1
10 1 10 1 00
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collect-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
80
ICP[A], PEAK COLLECTOR CURRENT
15 70
PC[W], POWER DISSIPATION
5 m Ap - p
60 50 40 30 20 10 0
10
5
0
0
50
10 0
15 0
20 0
25 0
30 0
35 0
40 0
0
25
50
o
75
1 00
1 25
1 50
1 75
VCB[V], COLLECTOR-BASE VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 5. Safe Operating (On Horizonal Deflection Output Circuit)
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD363
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.60 ±0.10
(1.70)
1.30 0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45° )
0.50 0.05
+0.10
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
Others parts begin by ks
KS-1 KS-2 KS-3 KS-4 KS-5 KS-6 KS-7 KS-8
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