|
|
Part: KSD5018
Category:
Discrete
-> Transistors
-> Bipolar
-> Darlington
-> NPN
Description: NPN Silicon Darlington Transistor
Company: Fairchild Semiconductor
Datasheet: Download KSD5018 datasheet File size : 177 kB
Request For quote: Find where to buy KSD5018
Datasheet text preview:
KSD5018
K S D 5 0 18
Built-in Resistor at B-E for Motor Drive
· High Voltage Power Darlington TR
1
TO-220 2.Collector 3.Emitter
1. Base
NPN Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Sym bol VCBO VCEO VEBO IC ICP IB PC TJ TSTG P arameter Collector- Base Voltage Collector- Emitter Voltage Emitter Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 600 275 10 4 6 0.5 40 150 - 55 ~ 150 Units V V V A A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) BVCER ICES IEBO VCE(sat) VBE(sat) Parameter Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC = 1.5A, IB = 0.05A, L = 25mH IC = 1mA, RBE = 330 VCE = 500V V EB= 10V, IC = 0 IC = 2A, IB = 5mA IC = 3A, IB = 20mA IC = 2A, IB = 5mA Mi n . 275 600 1 1 1.5 1.5 2 Ma x . Units V V mA mA V V V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD5018
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1 0000
10 0
VC E = 5V
IC = 400 IB
hFE, DC CURRENT GAIN
1 000
10
V BE(sat)
1
1 00
VCE(sat)
10 0 .0 1
0 .1
1
10
0. 1 0. 1
1
10
10 0
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
1 000
10
IC[A], COLLECTOR CURRENT
Cob[pF], CAPACITANCE
1 00
1
10 1 10 1 00
0 .1
1
10
100
100 0
VCB[V], COLLECTOR-BASE VOLTAGE
VCB [V], COLLECTOR BASE VOLTAGE
Figure 3. Collector Output Capacitance
Figure 4. Safe Operating Area
50 45
PC[W], POWER DISSIPATION
40 35 30 25 20 15 10 5 0
0
25
50
o
75
1 00
1 25
1 50
1 75
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD5018
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.60 ±0.10
(1.70)
1.30 0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45° )
0.50 0.05
+0.10
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
Others parts begin by ks
KS-1 KS-2 KS-3 KS-4 KS-5 KS-6 KS-7 KS-8
|
|
|
