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Part: KSD5041
Category:
Discrete
-> Transistors
-> Bipolar
-> Switching
-> NPN
Description: NPN Epitaxial Silicon Transistor
Company: Fairchild Semiconductor
Datasheet: Download KSD5041 datasheet File size : 177 kB
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Datasheet text preview:
KSD5041
K S D 5 0 41
AF Output Amplifier for Electronic Flash Unit
· Low Collector-Emitter Saturation Voltage · High Performance at Low Supply Voltage
1
T O -9 2
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 20 7 5 0.75 150 -55 ~ 150 U n i ts V V V A W °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) fT Co b Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=1mA, IB=0 IC=10µA, IC=0 VCB=10V, IE=0 VEB=7V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=2A IC=3A, IB=0.1A VCE=6V, IC=50mA VCB=20V, IE=0, f=1MHz 150 50 180 150 Min. 20 7 0.1 0.1 600 1 V M Hz pF Typ. Ma x . Units V V µA µA
hFE Classification
Classification hF E P 180 ~ 270 Q 230 ~ 380 R 340 ~ 600
©2002 Fairchild Semiconductor Corporation
Rev. A3, September 2002
KSD5041
Typical Characteristics
2. 4
800 700
IC[A], COLLECTOR CURRENT
2. 0
IB = 7mA
VC E= 2V Ta = 25
1. 6
IB = 5mA IB = 4mA IB = 3mA
hFE, DC CURRENT GAIN
IB = 6mA
600 500 400 300 200 100 0 0 .0 1
1. 2
0. 8
IB = 2mA
0. 4
IB = 1mA
0. 0 0. 0
0. 4
0. 8
1. 2
1. 6
2. 0
2. 4
0 .1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
8 7
8
VCE = 10V
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Ta = 25 C
o
7 6
IC/IB = 30 o Ta =25 C
6 5 4 3 2 1 0 0.0
5
4 3
2
1 0 0 .0
0.2
0.4
0.6
0.8
1.0
1.2
0 .2
0 .4
0 .6
0 .8
1 .0
1 .2
VBE[V], BASE-EMITTER VOLTAGE
VCE(sat)[V], SATURATION VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
400
IE=0 f = 1MHz o Ta = 25 C
350
VCE = 6V o Ta = 25 C
300
Cob[pF], CAPACITANCE
100
250
200
150
10
100
50
1
1
10
100
0 0.01
0.1
1
10
VCB [V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A3, September 2002
KSD5041
Typical Characteristics (Continued)
100
Single pulse o Ta = 25 C ICP IC
1 .0
10
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
0 .8
s m 10 t=
t= 1s
0 .6
1
0 .4
0.1
0 .2
0.01 0.1
0 .0
1
10
100
0
20
40
o
60
80
100
120
140
160
VCE[V], COLLECTOR-EMITTER VOLTAGE
Ta[ C], AMBIENT TEMPERATURE
Figure 7. Safe Operating Area
Figure 8. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A3, September 2002
Others parts begin by ks
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