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Details, datasheet, quote on part number:KSR1201
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| Part: | KSR1201 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => NPN => Epitaxial |
| Description: | NPN Epitaxial Silicon Transistor |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download KSR1201 datasheet File size : 37 kB |
| Request For quote: | Find where to buy KSR1201
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Datasheet text preview:
KSR1201
K S R 1 2 01
Switching Application (Bias Resistor Built In)
· Switching circuit, Inverter, Interface circuit, Driver Circuit · Built in bias Resistor (R1 =4.7K, R2=4.7K) · Complement to KSR2201
1
T O -92S
Equivalent Circuit
1.Emitter 2. Collector 3. Base
C
R1 B R2
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Par a m e t e r Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 50 50 10 100 300 150 -55 ~ 150
E
U n i ts V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE (sat) fT Co b VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=10mA IC=10mA, IB=0.5mA VCE=5mA, IC=10V VCB=10V, IE=0 f=1.0MHz VCE=5V, IC=100µA VCE=0.3V, IC=20mA 3. 2 0. 9 4. 7 1. 0 0. 5 3 6. 2 1. 1 250 3. 7 20 0.3 V M Hz pF V V K Min. 50 50 0.1 Typ. Ma x . Units V V µA
©2002 Fairchild Semiconductor Corporation
Rev. A2, October 2002
KSR1201
Typical Characteristics
1 000
1 00
VC E = 5V R1 = 4.7K R2 = 4.7K
VC E =0.3V R1 = 4.7K R2 = 4.7K
VI(on)[V], INPUT VOLTAGE
1 10 1 00 1 000
hFE, DC CURRENT GAIN
10
1 00
1
10
0 .1 0 .1
1
10
1 00
IC[mA ], COLLECTOR CURRENT
IC[m A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Input On Voltage
40 0
IC [µA], COLLECTOR CURRENT
1 000
PC[mW], POWER DISSIPATION
VC E = 5V R1 = 4.7K R2 = 4.7K
35 0 30 0 25 0 20 0 15 0 10 0 50 0
1 00
10 0 .0
0 .4
0 .8
1 .2
1 .6
2 .0
2 .4
0
25
50
o
75
10 0
12 5
15 0
17 5
VI(OFF)[V], INPUT OFF VOLTAGE
T a[ C], AMBIENT TEMPERATURE
Figure 3. Input Off Voltage
Figure 4. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A2, October 2002
KSR1201
Package Dimensions
TO-92S
4.00 ±0.20 2.31 ±0.20
0.66 MAX.
(1.10)
0.49 ±0.10
1.27TYP [1.27±0.20] 3.72 ±0.20
1.27TYP [1.27±0.20]
14.47 ±0.30
3.70 ±0.20
0.35 0.05
+0.10
2.86 ±0.20
0.77 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, October 2002
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