|
Details, datasheet, quote on part number:KSR1210
| |
| Part: | KSR1210 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => NPN => Epitaxial |
| Description: | NPN Epitaxial Silicon Transistor |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download KSR1210 datasheet File size : 33 kB |
| Request For quote: | Find where to buy KSR1210
|
| |
Datasheet text preview:
KSR1210
K S R 1 2 10
Switching Application (Bias Resistor Built In)
· Switching circuit, Inverter, Interface circuit, Driver Circuit · Built in bias Resistor (R=10K) · Complement to KSR2210
1
T O -92S
1.Emitter 2. Collector 3. Base
Equivalent Circuit
C
R B
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Par a m e t e r Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 40 40 5 100 300 150 -55 ~ 150
E
U n i ts V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE (sat) Co b fT R Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth Product Input Resistor Test Condition IC=100µA, IE=0 IE=1mA, IB=0 VCB=30V, IE=0 VCE=5V, IC=1mA IC=10mA, IB=1mA VCB=10V, IE=0 f = 1 MH z VCE=10V, IC=5mA 7 3. 7 250 10 13 100 Min. 40 40 0.1 600 0.3 V pF M Hz K Typ. Ma x . Units V V µA
©2002 Fairchild Semiconductor Corporation
Rev. A2, October 2002
KSR1210
Typical Characteristics
1 0000
10 00
VCE(sat)[mV], SATURATION VOLTAGE
VC E = 5V R = 10K
IC = 10IB R = 10K
hFE, DC CURRENT GAIN
1 000
10 0
1 00
10
10 0 .1
1 1 10 1 00
1
10
10 0
Ic[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
40 0 35 0
PC[mW], POWER DISSIPATION
30 0 25 0 20 0 15 0 10 0 50 0
0
25
50
o
75
10 0
12 5
15 0
17 5
Ta[ C], AMBIENT TEMPERATURE
Figure 3. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A2, October 2002
KSR1210
Package Dimensions
TO-92S
4.00 ±0.20 2.31 ±0.20
0.66 MAX.
(1.10)
0.49 ±0.10
1.27TYP [1.27±0.20] 3.72 ±0.20
1.27TYP [1.27±0.20]
14.47 ±0.30
3.70 ±0.20
0.35 0.05
+0.10
2.86 ±0.20
0.77 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, October 2002
|
|
