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Details, datasheet, quote on part number:KSR2002
 
 
Part:KSR2002
Category:Discrete => Transistors => Bipolar => General Purpose => PNP => Epitaxial
Description:PNP Epitaxial Silicon Transistor
Company:Fairchild Semiconductor
Datasheet:Download KSR2002 datasheet   File size : 38 kB
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Datasheet text preview:
KSR2002
K S R 2 0 02
Switching Application (Bias Resistor Built In)
· Switching circuit, Inverter, Interface circuit, Driver Circuit · Built in bias Resistor (R1=10K, R2=10K) · Complement to KSR1002
1
T O -9 2
1. Emitter 2. Collector 3. Base
Equivalent Circuit C
R1 B R2
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Par a m e t e r Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value - 50 - 50 - 10 -100 300 150 -55 ~ 150
E
U n i ts V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE(sat) fT Co b VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -5mA, IC= -10V VCB= -10V, IE=0 f=1.0MHz VCE= -5V, IC= -100µA VCE= -0.3V, IC= -10mA 7 0. 9 10 1 -0 . 5 -3 13 1. 1 200 5. 5 30 -0.3 V M Hz pF V V K Min. -50 -5 0 -0.1 Typ. Ma x . Units V V µA
©2002 Fairchild Semiconductor Corporation
Rev. A2, October 2002
KSR2002
Typical Characteristics
1 000
-1 0 0
VC E = - 5V R1 = 10 K R2 = 10 K
VC E = - 0.3V R1 = 10 K R2 = 10 K
VI(on)[V], INPUT VOLTAGE
hFE, DC CURRENT GAIN
-1 0
1 00
-1
10
-1
-1 0
-1 0 0
-1 0 0 0
-0 .1 -0 .1
-1
-1 0
-1 0 0
IC[mA ], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Input On Voltage
40 0
IC [µA], COLLECTOR CURRENT
-1 0 0 0
PC[mW], POWER DISSIPATION
VC E = - 5V R1 = 10 K R2 = 10 K
35 0 30 0 25 0 20 0 15 0 10 0 50 0
-1 0 0
-1 0 -0 .0
-0 .4
-0 .8
-1 .2
-1 .6
-2 .0
-2 .4
0
25
50
o
75
10 0
12 5
15 0
17 5
VI(OFF)[V], INPUT OFF VOLTAGE
Ta[ C], AMBIENT TEMPERATURE
Figure 3. Input Off Voltage
Figure 4. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A2, October 2002
KSR2002
Package Dimensions
TO-92
4.58 ­0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 ­0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 ­0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, October 2002