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Details, datasheet, quote on part number:KSR2010
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| Part: | KSR2010 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => PNP => Epitaxial |
| Description: | PNP Epitaxial Silicon Transistor |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download KSR2010 datasheet File size : 34 kB |
| Request For quote: | Find where to buy KSR2010
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Datasheet text preview:
KSR2010
K S R 2 0 10
Switching Application (Bias Resistor Built In)
· Switching circuit, Inverter, Interface circuit, Driver Circuit · Built in bias Resistor (R=10K) · Complement to KSR1010
1
T O -9 2
1. Emitter 2. Collector 3. Base
Equivalent Circuit C
R B
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Par a m e t e r Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value - 40 - 40 -5 -100 300 150 -55 ~ 150
E
U n i ts V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE (sat) Co b fT R Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Resistor Test Condition IC= -100µA, IE=0 IE= -1mA, IB=0 VCB= -30V, IE=0 VCE= -5V, IC= -1mA IC= -10mA, IB= -1mA VCB= -10V, IE=0 f = 1 MH z VCE= -10V, IC= -5mA 7 5. 5 200 10 13 100 Min. -40 -4 0 -0.1 600 -0.3 V pF M Hz K Typ. Ma x . Units V V µA
©2002 Fairchild Semiconductor Corporation
Rev. A2, October 2002
KSR2010
Typical Characteristics
10k
-1 0 0 0
VCE(sat)[mV], SATURATION VOLTAGE
VCE = - 5V R = 10K
IC = 10IB R = 10k
hFE, DC CURRENT GAIN
1k
-1 0 0
100
-1 0
10 -0 .1
-1 -1 -1 0 -1 0 0
-1
-1 0
-1 0 0
-1 0 0 0
IC[m A], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
40 0 35 0
PC[mW], POWER DISSIPATION
30 0 25 0 20 0 15 0 10 0 50 0
0
25
50
o
75
10 0
12 5
15 0
17 5
T a[ C], AMBIENT TEMPERATURE
Figure 3. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A2, October 2002
KSR2010
Package Dimensions
TO-92
4.58 0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, October 2002
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