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Part: MMBT6515
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
Description: MMBT6515 - NPN General Purpose Amplifier
Company: Fairchild Semiconductor
Datasheet: Download MMBT6515 datasheet File size : 209 kB
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Datasheet text preview:
MPS6515/MMBT6515
MPS6515/MMBT 6515
NPN General Purpose Amplifier
· This device is designed as a general purpose amplifier and switch. · The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier.
1 1. Emitter 2. Base 3. Collector TO-92 3 2 SOT-23 1 Mark: 3J 1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings* TC=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature - Continuous Value 25 40 4.0 200 -55 ~ +150 U n i ts V V V mA °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics TC=25°C unless otherwise noted
Symbol P arameter Test Condition IC = 0.5mA, IB = 0 IC =10µA, IE = 0 IC = 10µA, IC = 0 VCE = 30V, IE = 0 VCB = 30V, IE = 0, T = 60°C IC = 2.0mA, VCE = 10V IC = 100mA, VCE = 10V IC = 50mA, IB = 5.0mA VCB = 10V, IE = 0, f = 100kHz 250 150 Min. 25 40 4. 0 50 1. 0 500 0. 5 3. 5 V pF Max. Units V V V nA µA Off Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICBO hFE VCE(sat) Cobo Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance
On Characteristics *
Small Signal Characteristics
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
Thermal Characteristics TA=25°C unless otherwise noted
Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. MPS6515 625 5. 0 83.3 200 357 *MMBT6515 350 2. 8 Units mW mW / ° C °C/W °C/W
* Device mounted on FR-4 PCB 1.6" × 0.06"
©2003 Fairchild Semiconductor Corporation
Rev. A. February 2003
MPS6515/MMBT6515
Package Dimensions
TO-92
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation Rev. A. February 2003
MPS6515/MMBT6515
Package Dimensions (Continued)
SOT-23
Dimensions in Millimeters
© 2003 ©2003 Fairchild Semiconductor Corporation Rev. A. February 2003
Others parts begin by mm
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