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Details, datasheet, quote on part number:MUR8100E
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Datasheet text preview:
MUR8100E, RURP8100
Da ta Sheet D ec e m be r 2002
8A, 1000V Ultrafast Diodes
The MUR8100E and RUR8100 are ultrafast diodes (trr < 75ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor. Formerly developmental type TA09617.
Features
· Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <75ns · Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175oC · Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V · Avalanche Energy Rated · Planar Construction
Applications
· Switching Power Supply · Power Switching Circuits · General Purpose
Ordering Information
PART NUMBER M UR8100E R URP8100 P ACKAGE TO-220AC TO-220AC BRAND M U8100 R URP8100
Packaging
JEDEC TO-220AC
ANO DE CATHODE CATHODE (FLANGE)
NOTE: When ordering, use entire part number.
Symbol
K
A
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified MUR8100E RURP8100 UNI T S V V V A A A W mJ
oC
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 155oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave 1 Phase 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ
1000 1000 1000 8 16 100 75 20 -55 to 175
©2002 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. B1
MUR8100E, RURP8100
Electrical Specifications
SYMBOL VF IF = 8A IF = 8A, TC = 150oC IR VR = 1000V VR = 1000V, TC = 150oC t rr IF = 1A IF = 8A, dIF/dt = 200A/µs ta tb QRR CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time at dIF/dt = 100A/µs (See Figure 9), summation of ta + tb . ta = Time to reach peak reverse current at dIF/dt = 100A/µs (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. IF = 8A, dIF/dt = 200A/µs IF = 8A, dIF/dt = 200A/µs IF = 8A, dIF/dt = 200A/µs VR = 10V, IF = 0A TC = 25oC, Unless Otherwise Specified. TEST CONDITION MIN TYP 50 30 500 30 M AX 1.8 1. 5 100 500 85 100 2. 0 UNITS V V µA µA ns ns ns ns nC pF
oC/W
Typical Performance Curves
40 IR , REVERSE CURRENT (µA) 200 175oC
IF, FORWARD CURRENT (A)
175oC 10
10 100oC 1
0.1 25oC
100oC 1 0.5 0 0.5 1
25oC
0.01
0.001 1.5 2 2.5 3 0 200 400 600 800 1000 VF, FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. B1
MUR8100E, RURP8100 Typical Performance Curves
(Continued)
100 TC = 25oC, dIF/dt = 200A/µs t , RECOVERY TIMES (ns) t , RECOVERY TIMES (ns) 80
125
TC = 100oC, dIF/dt = 200A/µs
100
60
75
trr
40
trr ta tb
1 IF, FORWARD CURRENT (A) 4 8
50
ta
20
25
tb
0 0.5 1 IF, FORWARD CURRENT (A) 4 8 0 0.5
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
IF(AV) , AVERAGE FORWARD CURRENT (A)
150 TC = 175oC, dIF/dt = 200A/µs t , RECOVERY TIMES (ns) 125 100 75
8
DC 6 SQ . WAVE 4
trr ta
50 25 0 0.5 1 IF, FORWARD CURRENT (A) 4 8
tb
2
0 140
145
150
155
160
165
170
175
TC , CASE TEMPERATURE (oC)
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
100 CJ , JUNCTION CAPACITANCE (pF)
80
60
40
20
0
0
50
100
150
200
VR , REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. B1
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