|
Details, datasheet, quote on part number:MUR820
| |
Datasheet text preview:
MUR820, RURP820
Data Sheet J a nu a r y 2002
8A, 200V Ultrafast Diodes
MUR820 and RURP820 are ultrafast diodes with soft recovery characteristics (trr < 25ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Formerly developmental type TA09223.
Features
· Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <25ns · Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC · Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .200V · Avalanche Energy Rated · Planar Construction
Applications
· Switching Power Supplies · Power Switching Circuits · General Purpose
Ordering Information
PART NUMBER MUR820 RURP820 PACKAGE TO-220AC TO-220AC BRAND MUR820 RURP820
Packaging
JEDEC TO-220AC
ANODE CATHODE CATHODE (FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
MUR820 RURP820 Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 157oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ 200 200 200 8 16 100 50 20 -65 to 175 UNITS V V V A A A W mJ
oC
©2002 Fairchild Semiconductor Corporation
MUR820, RURP820 Rev. B
MUR820, RURP820
Electrical Specifications
SYMBOL VF IF = 8A IF = 8A, TC = 150oC IR VR = 200V VR = 200V, TC = 150oC trr IF = 1A, dIF/dt = 200A/µs IF = 8A, dIF/dt = 200A/µs ta tb QRR CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. IF = 8A, dIF/dt = 200A/µs IF = 8A, dIF/dt = 200A/µs IF = 8A, dIF/dt = 200A/µs VR = 10V, IF = 0A TC = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP 13 5 25 60 MAX 0.975 0.895 100 500 25 30 3 UNITS V V µA µA ns ns ns ns nC pF
oC/W
Typical Performance Curves
40 100 175oC
IF , FORWARD CURRENT (A)
IR , REVERSE CURRENT (µA)
10
10
100oC
0.1
100oC
175oC 1 0.5 0 0.2 0.4 0.6
25oC
0.01 25oC
0.8
1
1.2
1.4
0.001
0
50
100
150
200
VF , FORWARD VOLTAGE (V)
VR , REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
MUR820, RURP820 Rev. B
MUR820, RURP820 Typical Performance Curves
20 TC = 25oC, dIF /dt = 200A/µs t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 16
(Continued)
35 TC = 100oC, dIF /dt = 200A/µs 30 25 20
trr
trr ta
12
ta
8
15 10 5
tb
4
tb
0 0.5
1 IF , FORWARD CURRENT (A)
4
8
0 0.5
1 IF , FORWARD CURRENT (A)
4
8
FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT
FIGURE 4. trr , ta AND tb CURVES vs FORWARD CURRENT
TC = 175oC, dIF /dt = 200A/µs t, RECOVERY TIMES (ns) 40
IF(AV) , AVERAGE FORWARD CURRENT (A)
50
8
DC 6 SQ. WAVE 4
30
trr ta
20
2
10
tb
0 0.5
1 IF , FORWARD CURRENT (A)
4
8
0 140
145
150
155
160
165
170
175
TC , CASE TEMPERATURE (oC)
FIGURE 5. trr , ta AND tb CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
150 CJ , JUNCTION CAPACITANCE (pF) 125 100 75 50 25 0 0 50 100 150 VR , REVERSE VOLTAGE (V) 200
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
MUR820, RURP820 Rev. B
|
|
