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Details, datasheet, quote on part number:N2222A
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Datasheet text preview:
PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A
PN2222A
MMBT2222A
C
PZT2222A
C
E C B
E C B
TO - 9 2
E
SOT-23
Mark: 1P
B
SOT-223
MMPQ2222
E2 B2 E3 B3 E4 B4
NMT2222
C2 E1 C1
E1
B1
SOIC-16
pin #1 C1
C2 C1
C3 C2
C4 C4 C3
B2 E2
SOT-6
Mark: .1B
B1
NPN General Purpose Amplifier
This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC T J , T s tg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40 75 6.0 1.0 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
1997 Fairchild Semiconductor Corporation
PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
T est Conditions
Mi n
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO IBL Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current IC = 10 mA, IB = 0 IC = 10 µA, IE = 0 IE = 10 µA, IC = 0 VCE = 60 V, VEB(OFF) = 3.0 V VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 150°C VEB = 3.0 V, IC = 0 VCE = 60 V, VEB(OFF) = 3.0 V 40 75 6.0 10 0.01 10 10 20 V V V nA µA µA nA nA
ON CHARACTERISTICS
hFE DC Current Gain IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 10 mA, VCE = 10 V, TA = -55°C IC = 150 mA, VCE = 10 V* IC = 150 mA, VCE = 1.0 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 35 50 75 35 100 50 40
300
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage*
0.6
0.3 1.0 1.2 2.0
V V V V
SMALL SIGNAL CHARACTERISTICS
fT C obo C i bo rb'CC NF Re(hie) Current Gain - Bandwidth Product Output Capacitance Input Capacitance Collector Base Time Constant Noise Figure Real Part of Common-Emitter High Frequency Input Impedance
(except MMPQ2222 and NMT2222)
IC = 20 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, IE = 0, f = 100 kHz VEB = 0.5 V, IC = 0, f = 100 kHz IC = 20 mA, VCB = 20 V, f = 31.8 MHz IC = 100 µA, VCE = 10 V, RS = 1.0 k, f = 1.0 kHz IC = 20 mA, VCE = 20 V, f = 300 MHz
300 8.0 25 150 4.0 60
MHz pF pF pS dB
SWITCHING CHARACTERISTICS
td tr ts tf Delay Time Rise Time Storage Time Fall Time
(except MMPQ2222 and NMT2222)
VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA
10 25 225 60
ns ns ns ns
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10)
PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A
NPN General Purpose Amplifier
(continued)
Thermal Characteristics
Symbol
PD R J C R J A
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN2222A 625 5.0 83.3 200
Max
*PZ T2222A 1,000 8.0 125
Units
mW mW /°C °C/W °C/W
Symbol
PD R J A
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die
Max
**M M BT2222A 350 2.8 357 M M PQ2222 1,000 8.0 125 240
Units
mW mW /°C °C/W °C/W °C/W
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Typical Characteristics
Typical Pulsed Current Gain vs Collector Current
500
VCE = 5V
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation Voltage vs Collector Current
0.4 = 10 0.3
125 °C 25 °C
400 300 200
25 °C 125 °C
0.2
100
- 40 °C
0.1
- 40 °C
0 0.1
0.3
1 3 10 30 100 I C - COLLECTOR CURRENT (mA)
300
1
10 100 I C - COLLECTOR CURRENT (mA)
500
V E(ON)- BASE-EMITTER ON VOLTAGE (V) B
VBESAT- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
1
= 10
Base-Emitter ON Voltage vs Collector Current
1 VCE = 5V 0.8
- 40 °C 25 °C
0.8
- 40 °C 25 °C
0.6
0.6
125 °C
125 °C
0.4
0.4 1 IC 10 100 - COLLECTOR CURRENT (mA) 500
0.2 0.1
1 10 I C - COLLECTOR CURRENT (mA)
25
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