Details, datasheet, quote on part number: N302AP
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionN-channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
CompanyFairchild Semiconductor
DatasheetDownload N302AP datasheet
Find where to buy


Features, Applications

N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs

This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.


Fast switching rDS(ON) = 0.0019 (Typ), VGS = 10V rDS(ON) = 0.0027 (Typ), VGS 4.5V Qg (Typ) = 110nC, VGS = 5V Qgd (Typ) = 31nC CISS (Typ) = 11000pF

TO-220AB MOSFET Maximum Ratings = 25°C unless otherwise noted

Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 4.5V) Pulsed Power dissipation Derate above 25oC Operating and Storage Temperature Ratings Figure to 175 Units W/oC oC

RJC RJA Thermal Resistance Junction to Case TO-220 Thermal Resistance Junction to Ambient 0.43 62
Device Marking N302AP Device ISL9N302AP3 Package TO-220AB Reel Size Tube Tape Width N/A Quantity 50

BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current = 250µA, VGS = 0V VDS = 25V VGS = 150o VGS µA nA

VGS(TH) rDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, = 75A, VGS = 75A, VGS 4.5V V

CISS COSS CRSS Qg(TOT) Qg(5) Qg(TH) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 15V, VGS = 1MHz VGS to 10V VGS 15V DD VGS pF nC

tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time ns

tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time ns

VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 75A ISD = 40A ISD = 75A, dISD/dt = 100A/µs ISD = 75A, dISD/dt ns nC

Figure 1. Normalized Power Dissipation vs Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs Case Temperature


Figure 3. Normalized Maximum Transient Thermal Impedance



Related products with the same datasheet
Some Part number from the same manufacture Fairchild Semiconductor
N302AS N-channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
NC7NP04 NC7NP04 - Tinylogic Ulp Triple Inverter
NC7NP14 NC7NP14 - Tinylogic Ulp Triple Inverter With Schmitt Trigger Input
NC7NP34 NC7NP34 - Tinylogic Ulp Triple Buffer
NC7NZ04 Tinylogic Uhs Inverter
NC7NZ14 Tinylogic Uhs Inverter With Schmitt Trigger Input
NC7NZ14L8X Tinylogic Uhs Inverter With Schmitt Trigger Input
NC7NZ17 Tinylogic Uhs Triple Buffer With Schmitt Trigger Inputs
NC7NZ34 Tinylogic Uhs Triple Buffer
NC7NZ34L8X Tinylogic Uhs Triple Buffer
NC7NZU04 Tinylogic Uhs Unbuffered Inverter
NC7NZU04K8X Tinylogic Uhs Unbuffered Inverter
NC7NZU04L8X Tinylogic Uhs Unbuffered Inverter
NC7S00 Tinylogic HS 2-Input NAND Gate
NC7S00P5 Tinylogic HS 2-input NAND Gate
NC7S00P5X Tinylogic HS 2-Input NAND Gate
NC7S02 Tinylogic HS 2-Input NOR GATE
NC7S02P5 Tinylogic HS 2-input NOR GATE
NC7S02P5X Tinylogic HS 2-Input NOR GATE
NC7S04 Tinylogic HS Inverter
NC7S04P5 Tinylogic HS Inverter
Same catergory

2N6050 : IC(A) = 12, VCBO(V) = 60, VCEO(V) = 60, PD(W) = 150, Package = TO-3, HFE(Min/Max) = 750/18K, IC/VCE(A/V) = 6.0/3.0, VCE(SAT)(V) = 2.0, ic / IB(A/mA) = 6.0/24.

2N916DCSM : Screening Options Available = ;; Polarity = NPN ;; Package = LCC2 (MO-041BB) ;; Vceo = 25V ;; IC(cont) = 0.1A ;; HFE(min) = 50 ;; HFE(max) = 200 ;; @ Vce/ic = 5V / 10mA ;; FT = 250MHz ;; PD = 0.36W.

2SC5580 : Silicon NPN Epitaxial Planer Type ( For High-frequency Oscillation / Switching ).

30WQ06FN : . IF(AV) Rectangular waveform VRRM IFSM 5 µs sine @ 3 Apk, = 125°C The 30WQ06FN surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection.

FZ800R16KF4 : . Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung Kollektor-Dauergleichstrom Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom Isolations-Prüfspannung collector-emitter voltage DC-collector current.

HVC374B : Variable Capacitance Diode For Vco. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

MJF6388 : Power 10A 100V NPN , Package: TO-220 Fullpak, Pins=3. Designed for general­purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. Isolated Overmold Package, TO­220 Type Electrically Similar to the Popular 2N6668, TIP102 and TIP107 100 VCEO(sus) 10 A Rated Collector Current No Isolating Washers Required.

Q62702-A919 : Diode Low Leakage Sot-23. q Low-leakage applications q Medium speed switching times q Single diode 2 1 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, 1 µs Total power dissipation, 54 °C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS For detailed.

UMA5818 : Schottky Rectifier, Package : (none). ULTRAMITETM SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS The UMA5817 thru UMA5819 UltraMiteTM series offers small efficient surface mount packaging with the same electrical as the popular 1N5817, 1N5818, and 1N5819 Schottky rectifiers. It provides the same size footprint as other small surface mount or BA package options except with a much lower profile.

Si1419DH : P-Channel Power MOSFET. D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance APPLICATIONS D Active Clamp Switch in DC/DC Power Supplies Lot Traceability and Date Code Part # Code Ordering Information: Si1419DH-T1--E3 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Drain-Source Voltage Gate-Source Voltage.

B82450H2364A000 : IND,FERRITE,2.36MH,3% +TOL,3% -TOL,4514 CASE. s: Application: General Purpose.

KSC5020OJ69Z : 3 A, 500 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN ; Package Type: TO-220, TO-220, 3 PIN.

MPC108100J : RESISTOR, METAL GLAZE/THICK FILM, 10 W, 5 %, 100 ppm, 10 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Resistance Range: 10 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 100 Ā±ppm/Ā°C ; Power Rating:.

SCD0302T-820M-HF : 1 ELEMENT, 82 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: ONE SURFACE ; Application: General Purpose, Power Choke ; Inductance Range: 82 microH ; Rated DC Current: 340 milliamps.

SI7404DN-E3 : 8.5 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0130 ohms ; Package Type: 1212-8, POWERPAK-8 ; Number of units in IC: 1.

SKKT71/20E : 109.9 A, 2000 V, SCR, TO-240AA. s: VDRM: 2000 volts ; VRRM: 2000 volts ; IT(RMS): 110 amps ; IGT: 150 mA ; Standards and Certifications: RoHS ; Package Type: TO-240AA, 5 PIN ; Pin Count: 5.

SP1213TCQ-3-0.047-20-1 : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 2000 V, 0.047 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 0.0470 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 2000 volts ; Mounting.

START620TR : C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: SC-70, 4 PIN ; Number of units in IC: 1 ; Operating Frequency: 45000 MHz.

TK7A55D : 7 A, 550 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 550 volts ; rDS(on): 1.25 ohms ; Package Type: ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN ; Number of units in IC: 1.

VCE2605 : 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel, P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; rDS(on): 0.5000 ohms ; Package Type: VEC8, 8 PIN ; Number of units in IC: 2.

0-C     D-L     M-R     S-Z