Details, datasheet, quote on part number: N303AS
PartN303AS
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionN-channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
CompanyFairchild Semiconductor
DatasheetDownload N303AS datasheet
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Features, Applications

N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs

This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

Features

Fast switching rDS(ON) = 0.0019 (Typ), VGS = 10V rDS(ON) = 0.0027 (Typ), VGS 4.5V Qg (Typ) = 110nC, VGS = 5V Qgd (Typ) = 31nC CISS (Typ) = 11000pF

Applications
TO-220AB MOSFET Maximum Ratings = 25°C unless otherwise noted

Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 4.5V) Pulsed Power dissipation Derate above 25oC Operating and Storage Temperature Ratings Figure to 175 Units W/oC oC

RJC RJA Thermal Resistance Junction to Case TO-220 Thermal Resistance Junction to Ambient 0.43 62
Device Marking N302AP Device ISL9N302AP3 Package TO-220AB Reel Size Tube Tape Width N/A Quantity 50

BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current = 250µA, VGS = 0V VDS = 25V VGS = 150o VGS µA nA

VGS(TH) rDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, = 75A, VGS = 75A, VGS 4.5V V

CISS COSS CRSS Qg(TOT) Qg(5) Qg(TH) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 15V, VGS = 1MHz VGS to 10V VGS 15V DD VGS pF nC

tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time ns

tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time ns

VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 75A ISD = 40A ISD = 75A, dISD/dt = 100A/µs ISD = 75A, dISD/dt ns nC

Figure 1. Normalized Power Dissipation vs Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs Case Temperature

PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: = t1/t2 PEAK TJ = PDM x ZJC x RJC 10-2 t, RECTANGULAR PULSE DURATION (s) 100 101

Figure 3. Normalized Maximum Transient Thermal Impedance

5000 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: TC 150


 

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