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Details, datasheet, quote on part number:N303AS
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| Part: | N303AS |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | N-channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download N303AS datasheet File size : 125 kB |
| Request For quote: | Find where to buy N303AS
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Datasheet text preview:
ISL9N302AP3
January 2002
ISL9N302AP3
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
· Fast switching · rDS(ON) = 0.0019 (Typ), VGS = 10V · rDS(ON) = 0.0027 (Typ), VGS = 4.5V · Qg (Typ) = 110nC, VGS = 5V · Qgd (Typ) = 31nC · CISS (Typ) = 11000pF
Applications
· DC/DC converters
SOURCE DRAIN GATE D
G DRAIN (FLANGE) S
TO-220AB MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 4.5V) Pulsed Power dissipation Derate above 25oC Operating and Storage Temperature Ratings 30 ±20 75 75 Figure 4 345 2.3 -55 to 175 Units V V A A A W W/oC oC
ID
PD TJ, TSTG
Thermal Characteristics
RJC RJA Thermal Resistance Junction to Case TO-220 Thermal Resistance Junction to Ambient TO-220 0.43 62
oC/W oC/W
Package Marking and Ordering Information
Device Marking N302AP Device ISL9N302AP3 Package TO-220AB Reel Size Tube Tape Width N/A Quantity 50
©2002 Fairchild Semiconductor Corporation
Rev. B January 2002
ISL9N302AP3
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 25V VGS = 0V TC = 150o VGS = ±20V 30 1 250 ±100 V µA nA
On Characteristics
VGS(TH) rDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 75A, VGS = 10V ID = 75A, VGS = 4.5V 1 3 0.0019 0.0025 0.0027 0.0033 V
Dynamic Characteristics
CISS COSS CRSS Qg(TOT) Qg(5) Qg(TH) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 15V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V V = 15V DD VGS = 0V to 1V ID = 75A Ig = 1.0mA 11000 2000 900 200 110 12 25 31 300 165 18 pF pF pF nC nC nC nC nC
Switching Characteristics (VGS = 4.5V)
tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time 29 120 45 34 224 119 ns ns ns ns ns ns
VDD = 15V, ID = 28A VGS = 4.5V, RGS = 1.5
Switching Characteristics (VGS = 10V)
tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time 16 120 70 30 204 150 ns ns ns ns ns ns
VDD = 15V, ID = 28A VGS = 10V, RGS = 1.5
Unclamped Inductive Switching
tAV Avalanche Time ID = 7.2A, L = 3.0mH 480 µs
Drain-Source Diode Characteristics
VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 75A ISD = 40A ISD = 75A, dISD/dt = 100A/µs ISD = 75A, dISD/dt = 100A/µs 1.25 1.0 42 34 V V ns nC
©2002 Fairchild Semiconductor Corporation
Rev. B January 2002
ISL9N302AP3
Typical Characteristic
1.2 80
POWER DISSIPATION MULTIPLIER
1.0 ID, DRAIN CURRENT (A) 60 VGS = 10V
0.8
VGS = 4.5V 40
0.6
0.4
20
0.2
0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC)
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs Ambient Temperature
2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
ZJC, NORMALIZED THERMAL IMPEDANCE
PDM 0.1 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-2 t , RECTANGULAR PULSE DURATION (s) 10-1 100 101
0.01 10-5
10-4
10-3
Figure 3. Normalized Maximum Transient Thermal Impedance
5000 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150
IDM , PEAK CURRENT (A)
1000
VGS = 10V
VGS = 5V
100 50 10-5 10-4 10-3 10-2 t , PULSE WIDTH (s) 10-1 100 101
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
Rev. B January 2002
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