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Details, datasheet, quote on part number:NDT455N
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| Part: | NDT455N |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | N-channel Enhancement Mode Field Effect Transistor |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download NDT455N datasheet File size : 86 kB |
| Request For quote: | Find where to buy NDT455N
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Datasheet text preview:
July 1996
NDT455N N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features
11.5 A, 30 V. RDS(ON) = 0.015 @ VGS = 10 V RDS(ON) = 0.02 @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
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D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
T A = 25°C unless otherwise noted
NDT455N 30 20
(Note 1a)
Units V V A
- Continuous - Pulsed
± 11.5 ± 40
Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1c)
3 1.3 1.1 -65 to 150
W
TJ,TSTG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
42 12
°C/W °C/W
© 1997 Fairchild Semiconductor Corporation
NDT455N Rev.F
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Conditions VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V TJ = 55°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = 250 µA TJ = 125°C VGS = 10 V, ID = 11.5 A TJ = 125°C VGS = 4.5 V, ID = 10 A ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 10 V, ID = 11.5 A, VGS = 10 V VDD = 15 V, ID = 1 A, VGEN = 10 V, RGEN = 6 VGS = 10 V , VDS = 5 V VGS = 4.5 V, VDS = 5 V VGS = 10 V, ID = 11.5 A VDS = 15, VGS = 0 V, f = 1.0 MHz DYNAMIC CHARACTERISTICS 1220 715 280 11 16 48 40 43 4 11 20 30 80 70 61 pF pF pF ns ns ns ns nC nC nC 30 15 26 S 1 0.7 1.5 0.9 0.013 0.019 0.018 Min 30 1 10 100 -100 3 2.2 0.015 0.03 0.02 A Typ Max Units V µA µA nA nA V OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
SWITCHING CHARACTERISTICS (Note 2)
NDT455N Rev.F
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol IS VSD trr
Notes: 1.
Parameter
Conditions
Min
Typ
Max 2.5
Units A V ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time PD (t) =
T J -T A R J A (t )
VGS = 0 V, IS = 2.5 A (Note 2) VGS = 0 V, IF = 2.5 A dIF/dt = 100 A/µs
0.845
1.2 140
=
T J -T A R JC +R CA (t)
= I 2 ( t) × R DS(ON)@T J D
RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the
solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is defined by users. For general reference: Applications on 4.5"x5" FR-4 PCB under still air environment, typical RJA is found to be: a. 42oC/W with 1 in2 of 2 oz copper mounting pad. b. 95oC/W with 0.066 in2 of 2 oz copper mounting pad. c. 110oC/W with 0.0123 in2 of 2 oz copper mounting pad.
1a
1b
1c
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDT455N Rev.F
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