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Details, datasheet, quote on part number:NDT456P
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| Part: | NDT456P |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => DMOS (Double-diffused MOS) => Enhancement P-Channel |
| Description: | P-channel Enhancement Mode Field Effect Transistor |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download NDT456P datasheet File size : 102 kB |
| Request For quote: | Find where to buy NDT456P
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Datasheet text preview:
December 1998
NDT456P P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.
Features
-7.5 A, -30 V. RDS(ON) = 0.030 @ VGS = -10 V RDS(ON) = 0.045 @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
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D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
NDT456P
Units
VDSS VGSS ID
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
(Note 1a)
-30 ±20 ±7.5 ±20
(Note 1a) (Note 1b) (Note 1c)
V V A
PD
Maximum Power Dissipation
3 1.3 1.1 -65 to 150
W
TJ,TSTG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
RJA RJC
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
42 12
°C/W °C/W
© 1998 Fairchild Semiconductor Corporation
NDT456P Rev. F
Electrical Characteristics (T
Symbol Parameter OFF CHARACTERISTICS
A
= 25°C unless otherwise noted)
Conditions
Min
Typ
Max
Units
BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON)
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA VDS = -24 V, VGS = 0 V TJ = 55°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = - 250 µA TJ = 125°C VGS = -10 V, ID = -7.5 A TJ = 125°C VGS = - 4.5 V, ID = -6 A
-30 -1 -10 100 -100
V µA µA nA nA
Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
-1 -0.5
-1.5 -1.1 0.026 0.035 0.041
-3 -2.6 0.03 0.054 0.045
V
Static Drain-Source On-Resistance
ID(on) Gfs Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd
On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VGS = -10 V , VDS = - 5 V VGS = -4.5 V, VDS = - 5 V VGS = -10 V, ID = -7.5 A VDS = -15 V, VGS = 0 V, f = 1.0 MHz
-20 -10 13 1440 905 355
A S pF pF pF 20 120 130 130 67 ns ns ns ns nC nC nC
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2)
VDD = -15 V, ID = -7 A, VGEN = -10 V, RGEN = 12
10 65 70 70
VDS = -10 V, ID = -7.5 A, VGS = -10 V
47 5 12
NDT456P Rev. F
Electrical Characteristics (T
Symbol Parameter
A
= 25°C unless otherwise noted)
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS VSD trr
Notes: 1. P D (t)
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time =
T J -T A R JA (t)
-2.5
(Note 2)
A V ns
VGS = 0 V, IS = - 2.5 A
- 0.85
-1.2 140
VGS = 0 V, IF = - 2.5 A dIF/dt = 100 A/µs
=
T J -T A R JC +R CA (t)
= I 2 (t) × R DS(ON)@T J D
RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the
solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is defined by users. For general reference: Applications on 4.5"x5" FR-4 PCB under still air environment, typical RJA is found to be: a. 42oC when mounted on a 1 in2 pad of 2oz copper. b. 95oC when mounted on a 0.066in2 pad of 2oz copper. c. 110oC/W when mounted on a 0.00123in2 pad of 2oz copper.
1a
1b
1c
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDT456P Rev. F
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