|
Details, datasheet, quote on part number:NM27C512
| |
Datasheet text preview:
NM27C512 524,288-Bit (64K x 8) High Performance CMOS EPROM
July 1998
NM27C512 524,288-Bit (64K x 8) High Performance CMOS EPROM
General Description
The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild's proprietary CMOS AMGTM EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The NM27C512 provides microprocessor-based systems storage capacity for portions of operating system and application software. Its 90 ns access time provides no wait-state operation with high-performance CPUs. The NM27C512 offers a single chip solution for the code storage requirements of 100% firmwarebased equipment. Frequently-used software routines are quickly executed from EPROM storage, greatly enhancing system utility. The NM27C512 is configured in the standard JEDEC EPROM pinout which provides an easy upgrade path for systems which are currently using standard EPROMs. The NM27C512 is one member of a high density EPROM Family which range in densities up to 4 Megabit.
Features
s High performance CMOS -- 90 ns access time s Fast turn-off for microprocessor compatibility s Manufacturers identification code s JEDEC standard pin configuration -- 28-pin PDIP package -- 32-pin chip carrier -- 28-pin CERDIP package
Block Diagram
VCC GND VPP OE CE/PGM Output Enable and Chip Enable Logic Output Buffers Data Outputs O0 - O7
Y Decoder
..
524,288-Bit Cell Matrix
A0 - A15 Address Inputs
.......
X Decoder
DS010834-1 AMG is a trademark of WSI, Inc.
© 1998 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
NM27C512 524,288-Bit (64K x 8) High Performance CMOS EPROM
Connection Diagrams
27C080 27C040 27C020 27C010 27C256 A19 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND XX/VPP XX/VPP XX/VPP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND
DIP NM27C512
A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC A14 A13 A8 A9 A11 OE/VPP A10 CE/PGM O7 O6 O5 O4 O3
27C256 27C010 27C020 27C040 27C080 VCC VCC A14 A13 A8 A9 A11 OE A10 CE/PGM O7 O6 O5 O4 O3 VCC VCC A18 A17 A14 A13 A8 A9 A11 OE A10 O7 O6 O5 O4 O3 VCC A18 A17 A14 A13 A8 A9 A11 OE/VPP A10 O7 O6 O5 O4 O3
VPP
A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND
XX/PGM XX/PGM XX A17 A14 A13 A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 A14 A13 A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3
CE/PGM CE/PGM
DS010834-2 Compatible EPROM pin configurations are shown in the blocks adjacement to the NM27C512 pins.
Commercial Temp Range (0°C to +70°C)
Parameter/Order Number
NM27C512 Q, N, V 90 NM27C512 Q, N, V 120 NM27C512 Q, N, V 150
Pin Names
A0A15 CE/PGM OE O0O7 NC Addresses Chip Enable/Program Output Enable Outputs Don't Care (During Read)
Access Time (ns)
90 120 150
Industrial Temp Range (-40°C to +85°C)
Parameter/Order Number
NM27C512 QE, NE, VE 120 NM27C512 QE, NE, VE 150 Q = Quartz-Windowed Ceramic DIP Package N = Plastic DIP Package V = PLCC Package · All packages conform to the JEDEC standard. · All versions are guaranteed to function for slower speeds.
PLCC
A7 A12 A15 NC VCC A14 A13
4 3 2 1 32 31 30
Access Time (ns)
120 150
A6 A5 A4 A3 A2 A1 A0 NC O0 5 6 7 8 9 10 11 12 13
29 28 27 26 25 24 23 22 21
14 15 16 17 18 19 20
A8 A9 A11 NC OE/VPP A10 CE/PGM O7 O8
O1 O2 GND NC O3 O4 O5
DS010834-3
2
www.fairchildsemi.com
NM27C512 524,288-Bit (64K x 8) High Performance CMOS EPROM
Absolute Maximum Ratings (Note 1)
Storage Temperature All Input Voltages Except A9 with Respect to Ground VPP and A9 with Respect to Ground VCC Supply Voltage with Respect to Ground -65°C to +150°C -0.6V to +7V -0.7V to +14V -0.6V to +7V
ESD Protection (MIL Std. 883, Method 3015.2) All Output Voltages with Respect to Ground
>2000V VCC + 1.0V to GND -0.6V
Operating Range
Range
Commercial Industrial
Temperature
0°C to +70°C -40°C to +85°C
VCC
+5V +5V
Tolerance
±10% ±10%
Read Operation DC Electrical Characteristics
Symbol
VIL VIH VOL VOH ISB1 ISB2 ICC1 ICC2
Parameter
Input Low Level Input High Level Output Low Voltage Output High Voltage VCC Standby Current (CMOS) VCC Standby Current VCC Active Current VCC Active Current CMOS Inputs VPP Supply Current VPP Read Voltage Input Load Current Output Leakage Current
Test Conditions
Min
-0.5 2.0
Max
0.8 VCC +1 0.4
Units
V V V V
IOL = 2.1 mA IOH = -2.5 mA CE = VCC ±0.3V CE = VIH CE = OE = VIL f = 5 MHz 3.5
100 1 40 35 10 VCC - 0.7 V CC 1 10
µA mA mA mA µA V µA µA
CE = GND, f = 5 MHz Inputs = VCC or GND, I/O = 0 mA C, E Temp Ranges VPP = VCC
IPP VPP ILI ILO
VIN = 5.5V or GND VOUT = 5.5V or GND
-1 -10
AC Electrical Characteristics
Symbol
tACC tCE tOE tDF tOH
Parameter Min
Address to Output Delay CE to Output Delay OE to Output Delay Output Disable to Output Float Output Hold from Addresses, CE or OE, Whichever Occurred First 0
90 Max
90 90 40 35 0
Min
120 Max
120 120 50 25
Min
150 Max
150 150 50 45
Units
ns
0
3
www.fairchildsemi.com
|
|
