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Details, datasheet, quote on part number:NZD560A
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Datasheet text preview:
NZD560A
NZD560A
NPN Low Saturation Transistor
· These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0A continuous. · Sourced from process NA.
1
D-PAK 2.Collector 3.Emitter
1. Bas e
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG P arameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 55 80 5 3 - 55 ~ +150 Units V V V A °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operation.
Electrical Characteristics TA=25°C unless otherwise noted
Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE P a r a m e te r Test Conditions IC = 10mA, IB = 0 IE = 100µA, IE = 0 IE = 100µA, IC = 0 VCB = 30V, IE = 0 VCB = 30V, IE = 0, TA = 100°C VEB = 4V, IC = 0 IC = 100mA, VCE = 2V IC = 500mA, VCE = 2V IC = 1A, VCE = 2V IC = 3A, VCE = 2V IC = 1A, VCE = 3V IC = 1A, IB = 100mA IC = 2A, IB = 200mA IC = 1A, IB = 8mA IC = 1A, IB = 100mA IC = 1A, IB = 8mA IC = 1A, VCE = 2V VCB = 10V, IE = 0, f = 1MHz IC = 100mA, VCE = 5V, f = 100MHz 75 70 250 80 25 200 Min. 55 80 5 100 10 10 Typ. Max. Units V V V nA µA nA Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain
On Characteristics * 550
VCE(sat)
Collector-Emitter Saturation Voltage
300 400 1. 5 1.25 1 1 30
mV mV V V V V pF M Hz
VBE(sat) VBE(on) Cobo fT
Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Transition Frequency
Small Signal Characteristics
* Pulse Test: Pulse width 300µs, Duty cycle 2.0%
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
NZD560A
Thermal Characteristics TA=25°C unless otherwise noted
Symbol PD RJA Total Device Dissipation Thermal Resistance, Junction to Ambient Parameter Max. 1.5 83 U n i ts W °C/W
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
NZD560A
Typical Characteristics
1000
1000
Ta=125 C
0
VCE=2V
Ta=125 C
0
VCE=3V
hFE, DC CURRENT GAIN
Ta=-40 C
0
Ta=25 C
0
hFE, DC CURRENT GAIN
Ta=-40 C
0
Ta=25 C
0
100
100
10 0.1
1
10
10 0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. DC Current Gain
10
VCE(sat)[V], SATURATION VOLTAGE
VBE(sat)[V], SATURATION VOLTAGE
IC=10IB
1
IC=10IB
1
Ta=25 C 0 Ta=-25 C Ta=125 C
0
0
0.1
Ta=125 C Ta=25 C
0 0
0
0.01
Ta=-40 C
1E-3 0.01
0.1
1
10
0.1 0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Colletor-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
3
80
VCE=2V
70
IE=0,f=1MHZ
2
1
125 C
0
25 C
0
-40 C
0
0 0.0
Cob[pF], OUTPUT CAPACITANCE
1.2
IC[A], COLLECTOR CURRENT
60 50 40 30 20 10 0
0.2
0.4
0.6
0.8
1.0
1
10
100
VBE[V], BASE-EMITTER VOLTAGE
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
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