Details, datasheet, quote on part number: NZT560
CategoryDiscrete => Transistors => Bipolar => High Current
DescriptionNPN Low Saturation Transistor
CompanyFairchild Semiconductor
DatasheetDownload NZT560 datasheet
Cross ref.Similar parts: FZT651, NSS60601MZ4T1G, NSS60601MZ4T3G, NSS40301MZ4T1G, NSS40301MZ4T3G, STN851, FZT560
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Features, Applications

These devices are designed with high current gain and low saturation voltage with collector currents to 3A continuous.

Absolute Maximum Ratings* TA=25C unless otherwise noted

Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range NZT560/NZT560A Units C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter = 100A VCB = 30V VCB = 100C VEB = 100mA, VCE = 500mA, VCE = 1A, VCE = 3A, VCE = 2V VCE(sat) Collector-Emitter Saturation Voltage = 1A, VCE = 2V VCB = 100mA, VCE NZT560 NZT560A Test Conditions Min. Typ. Max. Units A nA Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain

Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Transition Frequency
* Pulse Test: Pulse Width 300s, Duty Cycle 2.0%

Symbol PD RJA Parameter Total Device Dissipation Thermal Resistance, Junction to Ambient Max. 125 NZT560A Units W C/W

Figure 1. Base-Emitter Saturation Voltage vs Collector Current
Figure 3. Collector-Emitter Saturation Voltage vs Collector Current
Figure 4. Input/Output Capacitance vs Reverse Bias Voltage


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