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Details, datasheet, quote on part number:PN100
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| Part: | PN100 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => NPN => Amplifier |
| Description: | NPN General Purpose Amplifier |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download PN100 datasheet File size : 73 kB |
| Request For quote: | Find where to buy PN100
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Datasheet text preview:
PN100/PN100A/MMBT100/MMBT100A
PN100/PN100 A/MMBT1 00/MMBT1 00A
NPN General Purpose Amplifier
· This device is designed for general purpose amplifier applications at collector currents to 300mA. · Sourced from process 10.
1 1. Emitter 2. Base 3. Collector TO-92 3 2 SOT-23 Mark: N1/N1A 1. Base 2. Emitter 3. Collector 1
Absolute Maximum Ratings* TC=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature - Continuous Value 45 75 6.0 500 -55 ~ +150 U n i ts V V V mA °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TC=25°C unless otherwise noted
Symbol P arameter Test Condition IC = 10µA, IB = 0 IC = 1mA, IE = 0 IC = 10µA, IC = 0 VCB = 60V VCE = 40V VEB = 4V IC = 100µA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V* IC = 150mA, VCE = 5.0V * VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 200mA, IB = 20mA IC = 10mA, IB = 1.0mA IC = 200mA, IB = 20mA VCE = 20V, IC = 20mA VCB = 5.0V, f = 1.0MHz IC = 100µA, VCE = 5.0V RG = 2.0k, f = 1.0KHz 100 100 A 250 4. 5 5. 0 4. 0 100 100 A 100 100 A 100 100 A 80 240 100 300 100 100 100 Min. 75 45 6.0 50 50 50 Max. Units V V V nA nA nA Off Characteristics Collector-Base Breakdown Voltage BVCBO BVCEO BVEBO ICBO ICES IEBO hFE Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain
On Characteristics
450 600 350 0. 2 0. 4 0. 85 1. 0 V V V V M Hz pF dB dB
Small Signal Characteristics fT Cobo NF Current Gain Bandwidth Product Output Capacitance Noise Figure
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
PN100/PN100A/MMBT100/MMBT100A
Thermal Characteristics TA=25°C unless otherwise noted
Max. Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN100 PN100A 625 5. 0 83.3 200 357 *MMBT100 *MMBT100A 350 2. 8 Units mW mW / ° C °C/W °C/W
* Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06."
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
PN100/PN100A/MMBT100/MMBT100A
Typical Characteristics
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
400
Vce = 5V 125 °C
0.4
300
25 °C
= 10
0.3
25 °C
200
- 40 °C
0.2
100
0.1
125 °C - 40 °C
0 10
20 30 50 100 200 300 I C - COLLECTOR CURRENT (mA)
500
1
10 100 I C - COLLECTOR CURRENT (mA)
400
Figure 1. Typical Pulsed Current Gain vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage vs Collector Current
VBESAT - COLLECTOR-EMITTER VOLTAGE (V)
VBEON - BASE-EMITTER ON VOLTAGE (V)
1 0.8 0.6 0.4 0.2 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 300
- 40 °C
1 0.8 0.6 0.4 V CE = 5V 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 500
- 40 °C
25 °C 125 °C
25 °C 125 °C
= 10
Figure 3. Base-Emitter Saturation Voltage vs Collector Current
Figure 4. Base-Emitter On Voltage vs Collector Current
I CBO - COLLE CTOR CURRENT (nA)
10 VCB = 60V
100
f = 1.0 MHz
CAPACITANCE (pF)
10
Cib C ob
1
1
0. 1 25
50 75 10 0 12 5 TA - AMBIE NT TEMP ER ATUR E (° C)
15 0
0 .1 0.1
1 10 Vce - COLLECTOR VOLTAGE (V)
100
Figure 5. Collector Cutoff Current vs Ambient Temperature
Figure 6. Input and Output Capacitance vs Reverse Voltag
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
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