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Details, datasheet, quote on part number:PN200A
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| Part: | PN200A |
| Category: | Discrete => Transistors => Bipolar => General Purpose => PNP => Amplifier |
| Description: | PNP General Purpose Amplifier |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download PN200A datasheet File size : 899 kB |
| Request For quote: | Find where to buy PN200A
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Datasheet text preview:
PN200 / MMBT200 / PN200A / MMBT200A
PN200 PN200A
MMBT200 MMBT200A
C
E C B
TO-92
E
SOT-23
Mark: N2 / N2A
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage
TA = 25°C unless otherwise noted
Parameter
Value
45 60 6.0 500 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
TA = 25°C unless otherwise noted
Characteristic
PN200 PN200A 625 5.0 83.3 200
Max
*MMBT200 *MMBT200A 350 2.8 357
Units
PD RJC RJA
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
mW m W / °C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
PN200 / MMBT200 / PN200A / MMBT200A
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
T est Conditions
Mi n
Max
Units
OFF CHARACTERISTICS
BVCBO BVCEO BVEBO ICBO ICES IEBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage* Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IC = 10 µA, IB = 0 IC = 1.0 mA, IE = 0 IE = 10 µA, IC = 0 VCB = 50 V, IE = 0 VCE = 40 V, IE = 10 VEB = 4.0 V, IC = 0 60 45 6.0 50 50 50 V V V nA nA nA
ON CHARACTERISTICS
hF E DC Current Gain IC = 100 µA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V* IC = 150 mA, VCE = 5.0 V* V C E (s a t ) V B E (s a t ) Collector-Em itter Saturation Voltage Base-Em itter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* 200 200A 200 200A 200A 200 200A 80 240 100 300 100 100 100 450 600 350 0. 2 0. 4 0. 85 1. 0 V V V V
SMALL SIGNAL CHARACTERISTICS
fT Co b o NF Current Gain - Bandwidth Product Output Capacitance Noise Figure VCE = 20 V, IC = 20 mA VCB = 10 V, f = 1.0 MHz IC = 100 µA, VCE = 5.0 V, RG = 2.0 k, f = 1.0 kHz 250 6. 0 4. 0 MHz pF dB dB
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Characteristics
Typical Pulsed Current Gain vs Collector Current
500
V CE = 5V
VCES AT - COLLECTOR EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Coll ector -Em itt er Saturation Vo ltage vs Collect or Current
0. 3 = 10
400 300
125 °C
0 .2 5 0. 2
25 °C
0 .1 5 0. 1
125 °C 25 °C
200 100 0 0. 01
- 40 °C
0 .0 5 0 0. 1
- 40 °C
0 .1 1 10 100 I C - COLLECTOR CURRENT (mA)
1 10 10 0 I C - COLLECTOR CURRE NT (mA)
30 0
PN200 / MMBT200 / PN200A / MMBT200A
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
1. 2 1 0. 8 0. 6 0. 4 0. 2 0 0. 1
V BEON - BAS E EMITTER ON VOLTAGE (V)
V BESAT - BASE EM ITTE R VOLTAGE (V)
Bas e-Em itt er Saturation Voltag e vs Collector Current
= 10
Bas e Emitter ON Voltage vs Coll ect or Current
1 0. 8 0. 6 0. 4 0. 2 0 0. 1 V CE = 5V
- 40°C 25 °C 125 °C
- 40 °C 25 °C 125 °C
1 10 10 0 I C - COLLECTOR CURRE NT (mA)
30 0
1 10 I C - COLLECTOR CURRE NT (mA)
10 0 20 0
Coll ect or -Cutoff Current vs Ambient Temperature
I CBO - COLLE CTOR CURRENT (nA) V CB = 50V 10
BV CER - BREAKDOWN VOLTAGE (V)
10 0
Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base
95 90
1
85
80
0. 1
75
0 .0 1 25
50 75 10 0 T A - AMBIE NT TEMPERATURE ( ° C)
12 5
70 0.1
1
10
100
1000
RESI STANCE (k )
V CE - COLLECTOR-EMITTER VOLTAGE (V)
Colle ctor Saturation Region
4
Input and Output Capacitance vs Reverse Voltage
100
Ta = 25°C
f = 1.0 MHz
3
2
Ic =
100 uA
5 0 mA
30 0 mA
CAPACITANCE (pF)
10
Cib Cob
1
0 100 300 700 2000 4000
0.1
1
10
100
I B - BASE CURRENT (uA)
V CE - COLLECTOR VOLTAGE (V)
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