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Details, datasheet, quote on part number:PZTA56
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| Part: | PZTA56 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => PNP => Amplifier |
| Description: | Small Signal Transistor |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download PZTA56 datasheet File size : 904 kB |
| Request For quote: | Find where to buy PZTA56
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Datasheet text preview:
MPSA56 / MMBTA56 / PZTA56
MPSA56
MMBTA56
C
PZTA56
C
E C B
E C B
TO-92
E
SOT-23
Mark: 2G
B
SOT-223
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.
Absolute Maximum Ratings*
Symbol
VCES VCBO VEBO IC T J , T s tg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
80 80 4.0 500 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA56 625 5.0 83.3 200
Max
*MMBTA56 350 2.8 357 **PZTA56 1,000 8.0 125
Units
mW m W / °C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
1997 Fairchild Semiconductor Corporation
MPSA56 / MMBTA56 / PZTA56
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
T est Conditions
Mi n
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICEO ICBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Collector-Cutoff Current IC = 1.0 mA, IB = 0 IC = 100 µA, IE = 0 IE = 100 µA, IC = 0 VCE = 60 V, IB = 0 VCB = 80 V, IE = 0 80 80 4.0 0.1 0.1 V V V µA µA
ON CHARACTERISTICS
hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 100 mA, IB = 10 mA IC = 100 mA, VCE = 1.0 V 100 100 0.25 1.2 V V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product IC = 100 mA, VCE = 1.0 V, f = 100 MHz 50 MHz
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP (Is=12.27p Xti=3 Eg=1.11 Vaf=100 Bf=91.63 Ne=1.531 Ise=12.27p Ikf=1.009 Xtb=1.5 Br=1.287 Nc=2 Isc=0 Ikr=0 Rc=.6 Cjc=48.28p Mjc=.5615 Vjc=.75 Fc=.5 Cje=106.7p Mje=.5168 Vje=.75 Tr=496.3n Tf=865.8p Itf=.2 Vtf=2 Xtf=.8 Rb=10)
Typical Characteristics
V CESAT - COLLECTOR EMITTE R VOLTAGE (V)
TYP IC AL PULSED CURRE NT GAIN
Typ i cal Pulsed Current Gain vs Collector Current
3 00 2 50 2 00 1 50
25 °C 125 °C
Coll ector -Em itt er Saturation Vo ltag e vs Collector Current
0.8 = 10 0.6
VCE = 1V
0.4
25 °C
1 00 50
- 40 °C
0.2
- 40 °C 125 °C
F E-
h
0. 0 01
0 .01 0. 1 I C - COLLECTOR CURRENT (A)
0 10
10 0 I C - COLLECTOR CURRE NT (mA)
MPSA56 / MMBTA56 / PZTA56
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
V BE( ON)- BAS E EMITTER ON VOLTAGE (V)
V BESAT - BASE EM I TTE R VOLTAGE (V)
Bas e-Em itt er Saturation Voltag e vs Collector Current
1. 2 = 10
Bas e Emitter ON Voltage vs Coll ect or Current
1. 2 V CE = 1V 1
- 40 °C
1
- 40 °C
0. 8 0. 6 0. 4 0. 2 0 0. 1
25 °C 125 °C
0. 8
25 °C 125 °C
0. 6
0. 4 10
10 0 I C - COLLECTOR CURRE NT (mA)
1 00 0
1 10 10 0 I C - COLLECTOR CURRENT (mA)
1 00 0
Collector-Cutoff Current vs Ambient Temperature
I CBO - COLLECTOR CURRENT (nA) 10 V CB = 60V 1 CAPACITANCE (pF)
100
Input and Output Capacitance vs Reverse Voltage
f = 1.0 MHz
C ib
0.1
0.01
C ob 0.001 25 50 75 100 T A - AMBIENT TEMPERATURE (º C) 125
0.1 1 10 100
V CE - COLLECTOR VOLTAGE (V)
V CE - COLLECTOR-EMITTER VOLTAGE (V)
Collector Saturation Region
10
f T - GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product vs Collector Current
350 300 250 200 150 100 50 0 1 10 100
8
T A = 25°C
VCE = 5V
6
IC =
4
1 mA
1 0 mA
10 0 mA
2
0 3000
5000
10000
20000
30000
50000
I B - BASE CURRENT (uA)
IC - COLLECTOR CURRENT (mA)
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