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Details, datasheet, quote on part number:PZTA64
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| Part: | PZTA64 |
| Category: | Discrete => Transistors => Bipolar => Darlington => PNP |
| Description: | PNP Darlington Transistor |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download PZTA64 datasheet File size : 902 kB |
| Request For quote: | Find where to buy PZTA64
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Datasheet text preview:
MPSA64 / MMBTA64 / PZTA64
MPSA64
MMBTA64
C
PZTA64
C
E C B
E C B
TO-92
E
SOT-23
Mark: 2V
B
SOT-223
PNP Darlington Transistor
This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.
Absolute Maximum Ratings*
Symbol
VCES VCBO VEBO IC T J , T s tg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
30 30 10 1.2 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
PD R J C R J A
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient M PSA64 625 5.0 83.3 200
Max
*M M BTA64 350 2.8 357 **PZ TA64 1,000 8.0 125
Units
mW mW /°C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
1997 Fairchild Semiconductor Corporation
MPSA64 / MMBTA64 / PZTA64
PNP Darlington Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
T est Conditions
Mi n
Max
Units
OFF CHARACTERISTICS
V(BR)CES ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 100 µA, IB = 0 VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 30 100 100 V nA nA
ON CHARACTERISTICS*
hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V IC = 100 mA, VCE = 5.0 V IC = 100 mA, IB = 0.1 mA IC = 100 mA, VCE = 5.0 V 10,000 20,000 1.5 2.0 V V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V, f = 100 MHz 125 MHz
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Characteristics
3
VCESAT - COLLECTOR EM I TTE R VOLTAGE (V)
h F E- TYPICAL PULSED CURRENT GAIN (K)
Ty pi cal Pulsed Current Gain vs Collector Current
50 VCE = 5V 40 30 20 10 0 0 .0 1
125 °C
Collector-Emitter Saturation Vo ltage vs Collector Current
1. 6 = 1000 1. 2
- 40 °C
0. 8
25 °C 125 °C
25 °C - 40 °C
0. 4
0. 1 I C - COLLECTOR CURRENT (A)
1
0 0 . 00 1
0 .0 1 0. 1 I C - COLLECTOR CURRENT (A)
1
MPSA64 / MMBTA64 / PZTA64
PNP Darlington Transistor
(continued)
Typical Characteristics
(continued)
2 1. 6 1. 2 0. 8 0. 4
V BE( ON)- BASE EMITTER ON VOLTAGE (V)
VBESAT - BASE EMITTE R VOLTAGE (V)
Bas e-Em itt er Saturation Voltage vs Collector Current
= 1000
- 40 °C
Bas e Emitter ON Voltage vs Coll ect or Current
2 1. 6 1. 2 0. 8 0. 4 0 0 . 00 1 V CE = 5V
- 40 °C
25 °C 125 °C
25 °C 125 °C
0 0 . 00 1
0 .0 1 0. 1 I C - COLLECTOR CURRENT (A)
1
0 .0 1 0. 1 I C - COLLECTOR CURRENT (A)
1
Co ll ect or -C uto ff Current vs Ambient Temperature
I CBO - COLLE CTOR CURRENT (nA) 10 0 16
Input and Output Capacitance vs Reverse Bias Voltage
f = 1.0 MHz CAPACITANCE (pF) 12
V CB = 15V
10
1
8 C ib 4 C ob
0.1
0 .0 1 25
50 75 10 0 T A - AMBIE NT TEMP ER ATUR E ( ° C)
12 5
0 0.1
1 10 REVERSE VOLTAGE (V)
100
Pow er Dissipation vs Ambient Temperature
1 P D - POWER DISSIPATION (W)
0.75
SOT -223 TO-92
0.5
SOT-23
0.25
0
0
25
50 75 100 TEMP ERATURE ( o C)
125
150
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