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Details, datasheet, quote on part number:PZTA65
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Datasheet text preview:
MPSA65 / MMBTA65 / PZTA65
Discrete POWER & Signal Technologies
MPSA65
MMBTA65
C
PZTA65
C
E C B
E C B
TO-92
E
SOT-23
Mark: 2W
B
SOT-223
PNP Darlington Transistor
This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.
Absolute Maximum Ratings*
Symbol
VCES VCBO VEBO IC T J , T s tg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
30 30 10 1.2 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA65 625 5.0 83.3 200
Max
*MMBTA65 350 2.8 357 **PZTA65 1,000 8.0 125
Units
mW m W / °C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
© 1997 Fairchild Semiconductor Corporation
A65, Rev A
MPSA65 / MMBTA65 / PZTA65
PNP Darlington Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
T est Conditions
Min
Max
Units
OFF CHARACTERISTICS
V (B R )C E S IC B O IE B O C o lle c t o r - E m it t e r Breakdown V o lt a g e C o lle c t o r - C u t o f f Current E m it t e r - C u t o f f Current I C = 100 µA, I B = 0 V C B = 30 V, I E = 0 V E B = 8.0 V, I C = 0 30 100 100 V nA nA
ON CHARACTERISTICS*
hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V IC = 100 mA, VCE = 5.0 V IC = 100 mA, IB = 0.1 mA IC = 100 mA, VCE = 5.0 V 50,000 20,000 1.5 2.0 V V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V, f = 100 MHz 100 MHz
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
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