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Part: QEB441
Category:
Optoelectronics
-> Display
-> LEDs
-> LED Lamps
Description: Surface Mount Infrared Light Emitting Diode
Company: Fairchild Semiconductor
Datasheet: Download QEB441 datasheet File size : 211 kB
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Datasheet text preview:
SURFACE MOUNT INFRARED LIGHT EMITTING DIODE QEB441
PACKAGE DIMENSIONS
0.118 (3.0) 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) .041 (0.1) 0.035 (0.9) 0.028 (0.7)
0.091 (2.3) 0.083 (2.1)
0.134 (3.4) 0.118 (3.0)
0.094 (2.4)
0.043 (1.1) 0.020 (0.5)
ANODE
0.024 (0.6) 0.016 (0.4) 0.007 (.18) 0.005 (.12)
SCHEMATIC
NOTES: 1. Dimensions are in inches (millimeters) 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified.
ANODE CATHODE
DESCRIPTION
The QEB441 is a 730 nm AlGaAs LED encapsulated in a PLCC-2 package.
FEATURES
· = 730 nm · Chip Material: AlGaAs double heterojunction · Surface Mount PLCC-2 package · Wide Emission Angle, 120° · High Power · Tape and Reel option: .TR
2001 Fairchild Semiconductor Corporation DS300196 5/14/01
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www.fairchildsemi.com
SURFACE MOUNT INFRARED LIGHT EMITTING DIODE QEB441
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Flow)(2,3) Continuous Forward Current Peak Forward Current(4) Reverse Voltage Power Dissipation(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL IF IFP VR PD Rating -55 to +100 -55 to +100 260 for 10 sec 100 1 5 180 Unit °C °C °C mA A V mW
NOTES
1. Derate power dissipation linearly TBD mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Pulse conditions: tp = 100 µs, T = 10 ms.
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER TEST CONDITIONS
(TA =25°C)
SYMBOL MIN. TYP. MAX. UNITS
IF = 10 mA, tp = 20 ms Forward Voltage IF = 100 mA, tp = 20 ms IF = 500 mA, tp = 1 ms IF = 1A, tp = 100 µs Emission Angle Reverse Leakage Current Peak Emission Wavelength Spectral Bandwidth IF = 100 mA VR = 5 V IF = 100 mA IF = 100 mA IF = 100 mA, tp = 20 ms Radiant Intensity IF = 500 mA, tp = 1 ms IF = 1 A, tp = 100 µs Response Time IF = 10 mA, tp = 100 µs, T = 10 ms tr, tf Ie 2 1/2 IR P VF
-- -- -- -- -- -- 710 -- 2 9 16 --
-- 2.1 3.9 5.5 120 -- 730 25 3 14 24 --
2.0 -- 4.5 -- -- 10 750 -- 6 28 48 100 ns mW/sr % µA nm nm V
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5/14/01
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SURFACE MOUNT INFRARED LIGHT EMITTING DIODE QEB441
Fig.1 Relative Radiant Intensity vs. Input Current
10
Fig.2 Forward Current vs. Forward Voltage
IE - NORMALIZED RADIANT INTENSITY
1
IF - FORWARD CURRENT (mA)
102
101
0.1
100
10-1
0.01
10-2
0.001 1 10 100 1000
10-3 1 2 3 4 5 6
IF - INPUT CURRENT (mA)
VF - FORWARD VOLTAGE (V)
Fig.4 Forward Voltage vs. Ambient Temperature
6
IF=1000mA
VF - FORWARD VOLTAGE (V)
5 IF=500mA
Fig.3 Radiation Diagram
-20 -30 -40 -50 -60 -70 -80 -90 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 -10 0 10 20 30 40 50 60 70 80 90 1.0
4
3 IF=100mA 2 IF Pulsed Pulse Width=100us Duty Cycle=0.1% -40 -20 0 20 40 IF=50mA IF=20mA
1
0 60 80 100
TA - AMBIENT TEMPERATURE (°C)
Fig.5 Spectral Response
1.0 0.9 0.8
RELATIVE RESPONSE
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 660 680 700 720 740 760 780 800
WAVELENGTH (nm)
DS300196
5/14/01
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