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Details, datasheet, quote on part number:QEC113
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Datasheet text preview:
PLASTIC INFRARED LIGHT EMITTING DIODE QEC112
PACKAGE DIMENSIONS
0.116 (2.95) REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90)
QEC113
0.030 (0.76) NOM 0.800 (20.3) MIN
0.050 (1.27)
CATHODE 0.100 (2.54) NOM
0.155 (3.94) 0.018 (0.46) SQ. (2X)
SCHEMATIC
NOTES:
ANODE
1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
CATHODE
DESCRIPTION
The QEC11X is an 940 nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package.
FEATURES
· = 940 nm · Chip material = GaAs · Package type: T-1 (3mm) · Matched Photosensor: QSC112 · Narrow Emission Angle, 24° · High Output Power · Package material and color: Clear, peach tinted plastic
2001 Fairchild Semiconductor Corporation DS300334 5/21/01
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PLASTIC INFRARED LIGHT EMITTING DIODE QEC112
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Power Dissipation(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 50 5 100 Unit °C °C °C °C mA V mW
QEC113
1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing.
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER TEST CONDITIONS
(TA =25°C)
SYMBOL MIN TYP MAX UNITS
Peak Emission Wavelength Emission Angle Forward Voltage Reverse Current Radiant Intensity QEC112 Radiant Intensity QEC113 Rise Time Fall Time
IF = 100 mA IF = 100 mA IF = 100 mA, tp = 20 ms VR = 5 V IF = 100 mA, tp = 20 ms IF = 100 mA, tp = 20 ms IF = 100 mA
PE 2 1/2 VF IR IE IE tr tf
-- -- -- 6 14 -- --
940 24 -- -- -- -- 1000 1000
-- 1.5 10 30 -- -- --
nm Deg. V µA mW/sr mW/sr ns ns
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PLASTIC INFRARED LIGHT EMITTING DIODE QEC112
TYPICAL PERFORMANCE CURVES
QEC113
Fig.1 Normalized Radiant Intensity vs. Forward Current
Ie - NORMALIZED RADIANT INTENSITY
10 Normalized to: IF = 100 mA Pulsed tpw = 100 µs Duty Cycle = 0.1 % TA = 25°C
Fig.2 Coupling Characteristics of QEC11X And QSC11X
IC (ON) - NORMALIZED COLLECTOR CURRENT (mA)
1.0 Normalized to: d=0 IF Pulsed tpw = 100 µs Duty Cycle = 0.1 % VCC = 5 V RL = 100 TA = 25°C
0.8
1
0.6
0.1
0.4
0.01
0.2 IF = 20 mA 0.0 0 1
IF = 100 mA
0.001 1 10 100 1000
2
3
4
5
6
7
8
IF - FORWARD CURRENT (mA)
LENS TIP SEPARATION (INCHES)
Fig.3 Forward Voltage vs. Ambient Temperature
2.0 IF = 50 mA
0.8 1.0 0.9
Fig. 4 Normalized Intensity vs. Wavelength
VF - FORWARD VOLTAGE (V)
1.5 IF = 100 mA
NORMALIZED INTENSITY
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 875
1.0 IF = 20 mA
IF = 10 mA
0.5
Normalized to: IF Pulsed tpw = 100 µs Duty Cycle = 0.1 % -20 0 20 40 60 80 100
0.0 -40
900
925
950
975
1000
1025
TA - AMBIENT TEMPERATURE (°C)
(nm)
Fig. 5 Radiation Diagram
110 120 130 140 150 160 170 180 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0 100 90 80 70 60 50 40 30 20 10 0
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