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Details, datasheet, quote on part number:QED123UL
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Datasheet text preview:
PLASTIC INFRARED LIGHT EMITTING DIODE
QED123UL
PACKAGE DIMENSIONS
0.195 (4.95)
REFERENCE SURFACE
0.305 (7.75)
0.040 (1.02) NOM 0.800 (20.3) MIN
0.050 (1.25)
CATHODE 0.100 (2.54) NOM
0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X)
SCHEMATIC
ANODE NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. CATHODE
FEATURES
· · · · · · · · UL217 Approved = 880 nm Chip material = AlGaAs Package type: T-1 3/4 (5mm lens diameter) Matched Photosensor: QSB34 Narrow Emission Angle, 18° High Output Power Package material and color: Clear, peach
© 2004 Fairchild Semiconductor Corporation
Page 1 of 4
4/2/04
PLASTIC INFRARED LIGHT EMITTING DIODE
QED123UL
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Power Dissipation(1) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD Rating -40 to + 100 -40 to + 100 240 for 5 sec 260 for 10 sec 100 5 200 Unit °C °C °C °C mA V mW
NOTES: 1. Derate power dissipation linearly 2.67 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing .
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
Parameter Peak Emission Wavelength Emission Angle Forward Voltage Reverse Current Radiant Intensity QED121 Rise Time Fall Time Test Conditions IF = 20 mA IF = 100 mA IF = 100 mA, tp = 20 ms VR = 5 V IF = 100 mA, tp = 20 ms IF = 100 mA Symbol PE 21/2 VF IR IE tr tf Min -- -- -- -- 16 -- -- Typ 880 18 -- -- -- 800 800 Max -- -- 1.7 10 40 -- -- Units nm Deg. V µA mW/sr ns ns
© 2004 Fairchild Semiconductor Corporation
Page 2 of 4
4/2/04
PLASTIC INFRARED LIGHT EMITTING DIODE
QED123UL
Typical Performance Characteristics
NORMALIZED COLLECTOR CURRENT
10 1 IF = 100 mA Normalized to: Pulse Width = 100 µs Duty Cycle = 0.1% VCC = 5 V RL = 100 TA = 25°C
NORMALIZED RADIANT INTENSITY
Normalized to: IF= 100 mA, TA = 25°C Pulse Width = 100 µs 1
0.8
0.6 IF = 20 mA
0.1
0.4
0.01
0.2
0.001 1 10 100 1000
0 0 1 2 3 4 5 6
IF - INPUT CURRENT (mA)
LENS TIP SEPERATION (INCHES)
Fig. 1 Normalized Radiant Intensity vs. Input Current
Fig. 2 Coupling Characteristics of QED12X and QSD12X
1.0
2.5
NORMALIZED RADIANT INTENSITY
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
VF - FORWARD VOLTAGE (V)
IF = 50 mA 2
IF = 100 mA
1.5
1
IF = 10 mA Pulse Width = 100 µs Duty Cycle = 0.1%
IF = 20 mA
0.5
0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 775 800 825 850 875 900 925 950
TA - TEMPERATURE (°C)
(nm)
Fig. 3 Forward Voltage vs. Temperature
Fig. 4 Normalized Radiant Intensity vs. Wavelength
Fig. 5 Radiation Pattern
20 30 40 50 60 70 80 90 100 80 60 40 20 0 20 40 60 80 100 10 0° -10 -20 -30 -40 -50 -60 -70 -80 -90
© 2004 Fairchild Semiconductor Corporation
Page 3 of 4
4/2/04
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