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Details, datasheet, quote on part number:QED221
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Datasheet text preview:
PLASTIC INFRARED LIGHT EMITTING DIODE QED221
PACKAGE DIMENSIONS
0.195 (4.95)
QED222
QED223
REFERENCE SURFACE
0.305 (7.75)
0.040 (1.02) NOM 0.800 (20.3) MIN
0.050 (1.25)
CATHODE 0.100 (2.54) NOM
SCHEMATIC
0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X)
ANODE
NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
CATHODE
DESCRIPTION
The QED22X is an 880nm AlGaAs LED encapsulated in clear, purple tinted, plastic T-1 3/4 package.
FEATURES
· != 880 nm · Chip material = AlGaAs · Package type: T-1 3/4 (5mm lens diameter) · Matched Photosensor: QSD122/123/124 · Medium Wide Emission Angle, 40° · High Output Power · Package material and color: Clear, purple tinted, plastic
2001 Fairchild Semiconductor Corporation DS300337 12/07/01
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www.fairchildsemi.com
PLASTIC INFRARED LIGHT EMITTING DIODE QED221
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron) Continuous Forward Current Reverse Voltage Power Dissipation
(1) (5) (2,3,4) (2,3)
QED222
(TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD IF(Peak) (TA =25°C)
SYMBOL MIN
QED223
Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 100 5 200 1.5 Unit °C °C °C °C mA V mW A
Soldering Temperature (Flow)
Peak Forward Current
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER TEST CONDITIONS
TYP
MAX
UNITS
Peak Emission Wavelength Emission Angle Forward Voltage Reverse Current Radiant Intensity QED221 Radiant Intensity QED222 Radiant Intensity QED223 Rise Time Fall Time
IF = 100 mA IF = 100 mA IF = 100 mA, tp = 20 ms VR = 5 V IF = 100 mA, tp = 20 ms IF = 100 mA, tp = 20 ms IF = 100 mA, tp = 20 ms IF = 100 mA
! PE " VF IR IE IE IE tr tf
-- -- -- -- 10 16 25 -- --
880 ±20 -- -- -- -- -- 800 800
-- -- 1.7 10 20 32 -- -- --
nm Deg. V µA mW/sr mW/sr mW/sr ns ns
1. Derate power dissipation linearly 2.67 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. 5. Pulse conditions; tp = 100 µS, T = 10 ms.
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12/07/01
DS300337
PLASTIC INFRARED LIGHT EMITTING DIODE QED221
NORMALIZED RADIANT INTENSITY
10 Normalized to: IF= 100 mA, TA = 25°C Pulse Width = 100 µs 1
QED222
NORMALIZED COLLECTOR CURRENT
1
QED223
Fig. 2 Coupling Characteristics of QED22X with QSD12X
Normalized to: Pulse Width = 100 µs Duty Cycle = 0.1% VCC = 5 V RL = 100 TA = 25°C
Fig. 1 Normalized Radiant Intensity vs. Input Current
IF = 100 mA 0.8
0.6 IF = 20 mA 0.4
0.1
0.01
0.2
0.001
1
10
100
1000
0
0
1
2
3
4
5
6
IF - INPUT CURRENT (mA)
LENS TIP SEPERATION (INCHES)
Fig. 4 Normalized Radiant Intensity vs. Wavelength Fig. 3 Forward Voltage vs. Temperature
2.5 1.0
VF - FORWARD VOLTAGE (V)
IF = 50 mA 2
IF = 100 mA
NORMALIZED RADIANT INTENSITY
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 775 800 825 850 875 900 925 950
1.5
1
IF = 10 mA Pulse Width = 100 µs Duty Cycle = 0.1%
IF = 20 mA
0.5
0 -40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90 100
TA - TEMPERATURE (°C)
(nm)
Fig. 5 Forward Current vs. Forward Voltage
1000 TA = 25°C
Fig. 6 Radiation Pattern
20 30 10 0° -10 -20 -30 -40 -50 -60 -70 -80 -90 100 1 2 3 4 80 60 40 20 0 20 40 60 80 100
IF - FORWARD CURRENT (mA)
100 50 60 70 80 1 90
40
10
VF - FORWARD VOLTAGE (V)
DS300337
12/07/01
3 OF 4
www.fairchildsemi.com
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