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Details, datasheet, quote on part number:QED233
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Datasheet text preview:
PLASTIC INFRARED LIGHT EMITTING DIODE
QED233
PACKAGE DIMENSIONS
0.195 (4.95)
QED234
REFERENCE SURFACE
0.305 (7.75)
0.040 (1.02) NOM 0.800 (20.3) MIN
0.050 (1.25)
CATHODE 0.100 (2.54) NOM
0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X)
SCHEMATIC
NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
ANODE CATHODE
DESCRIPTION
The QED233 / QED234 is a 940 nm GaAs / AlGaAs LED encapsulated in a clear untinted, plastic T-1 3/4 package.
FEATURES
· = 940 nm · Chip material =GaAs with AlGaAs window · Package type: T-1 3/4 (5mm lens diameter) · Matched Photosensor: QSD122/123/124 · Medium Emission Angle, 40° · High Output Power · Package material and color: Clear, untinted, plastic · Ideal for remote control applications
2001 Fairchild Semiconductor Corporation DS300338 10/31/01
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PLASTIC INFRARED LIGHT EMITTING DIODE
QED233
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Power Dissipation(1) Peak Forward Current (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD IFP Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 100 5 200 1.5 Unit °C °C °C °C mA V mW A
QED234
1. Derate power dissipation linearly 2.67 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. 5. Pulse conditions; tp = 100 µs, T = 10 ms.
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER TEST CONDITIONS DEVICE
(TA =25°C)
SYMBOL MIN TYP MAX UNITS
Peak Emission Wavelength Spectral Bandwidth Temp. Coefficient of PE Emission Angle Forward Voltage Temp. Coefficient of VF Reverse Current Radiant Intensity Temp. Coefficient of IE Rise Time Fall Time
IF = 20 mA IF = 20 mA IF = 100 mA IF = 100 mA IF = 100 mA, tp = 20 ms IF = 100 mA VR = 5 V IF = 100 mA, tp = 20 ms IF = 20 mA IF = 100 mA
ALL ALL ALL ALL ALL ALL ALL QED233 QED234 ALL ALL ALL
PE -- TC 2 1/2 VF TCV IR IE TCI tr tf
-- 50
--
940 -- 0.2 40 -- -1.5 -- -- -- -0.6 1000 1000
-- nm -- -- 1.6 -- 10 50 -- -- -- --
nm
nm/K Deg. V mV/K µA mW/sr %/K ns
-- -- -- -- 10 27 -- -- --
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10/31/01 DS300338
PLASTIC INFRARED LIGHT EMITTING DIODE
QED233
TYPICAL PERFORMANCE CURVES TBD
Fig. 1 Normalized Radiant Intensity vs. Forward Current
10 2.0 IF = 50mA 1 IF =100mA
QED234
Fig. 2 Forward Voltage Vs. Ambient Temperature
Ie - NORMALIZED RADIANT INTENSITY
VF - FORWARD VOLTAGE (V)
Normalized to: IF = 100 mA TA = 25°C tpw = 100 µs
1.5
0.1
1.0
IF =10mA
IF =20mA
0.01
0.5 IF Pulsed tpw = 100 µs Duty Cycle = 0.1% 0.0 -40 -20 0 20 40 60 80 100
1
10
100
1000 1500
IF - FORWARD CURRENT (mA)
TA - AMBIENT TEMPERATURE (° C)
Fig. 3 Normalized Radiant Intensity vs. Wavelength
1.0
Fig. 4 Radiation Diagram
110 120 130 140 150 100 90 80 70 60 50 40 30 20 10 0 1.0
NORMALIZED INTENSITY
0.8 0.6 0.4 160 0.2 0 800 170 180 1.0
850
900
950
1000
1050
0.8
0.6
0.4
0.2
0.0
0.2
0.4
0.6
0.8
nm) (
Fig. 5 Forward Current vs. Forward Voltage
1000 TA = 25°C
IF - FORWARD CURRENT (mA)
100
10
1
1
2
3
4
VF - FORWARD VOLTAGE (V)
DS300338
10/31/01
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