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Part: QRB1113
Category:
Optoelectronics
-> Drivers/Controllers
-> Infrared/Remote Control
-> Remote Control
Description: Reflective Object Sensor
Company: Fairchild Semiconductor
Datasheet: Download QRB1113 datasheet File size : 1326 kB
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Datasheet text preview:
PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113
PACKAGE DIMENSIONS
0.420 (10.67) 0.328 (8.33) 0.150 (3.81) NOM
PIN 1 PIN 2
QRB1114
E S
E
0.373 (9.47)
0.226 (5.74)
0.703 (17.86)
S
PIN 3 PIN 4
0.020 (0.51) 4X
0.150 (3.81) MIN 0.603 (15.32)
REFLECTIVE SURFACE PIN1 ANODE PIN2 CATHODE PIN3 EMITTER PIN4 COLLECTOR
0.210 (5.33)
SCHEMATIC
0.300 (7.62)
NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
1
2
4
3
DESCRIPTION
The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle .200" in diameter.
FEATURES
· No contact surface sensing · Phototransistor output · Focused for sensing specular reflection · Daylight filter on photosensor · Dust cover
© 2002 Fairchild Semiconductor Corporation
Page 1 of 4
3/5/02 DS300350
PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Operating Temperature Storage Temperature Soldering Temperature Soldering Temperature EMITTER Reverse Voltage Power SENSOR Dissipation(1) (Iron)(2,3,4) (Flow)(2,3) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD VCEO VECO PD Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec 50 5 100 30 4.5 20 100 Units °C °C °C °C mA V mW V V mA mW
QRB1114
Continuous Forward Current
Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Power Dissipation(1)
NOTES 1. Derate power dissipation linearly 1.67 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. 5. D is the distance from the assembly face to the reflective surface. 6. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface. 7. Cross talk is the photo current measured with current to the input diode and no reflecting surface.
ELECTRICAL/OPTICAL CHARACTERISTICS (TA = 25°C)
Parameter EMITTER Forward Voltage Reverse Current Peak Emission Wavelength SENSOR Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current COUPLED On-state Collector Current QRB1113 QRB1114 Collector-Emitter Saturation Voltage Rise Time Fall Time Cross Talk IC = 1 mA IE = 0.1 mA VCE = 10 V, IF = 0 mA BVCEO BVECO ICEO 30 5 -- -- -- -- -- -- 100 V V nA IF = 40 mA VR = 5.0 V IF = 20 mA VF IR PE -- -- -- -- -- 940 1.7 100 -- V µA nm Test Conditions Symbol Min. Typ. Max. Units
IF = 40 mA, VCE = 5 V D = .150"(5,6) IF = 20 mA, IC = 0.5 mA VCE = 5 V, RL = 100 V IC(ON) = 5 mA IF = 40 mA, VCE = 5 V(7)
IC(ON) VCE (SAT) tr tf ICX
0.20 0.60 -- -- -- --
-- -- -- 8 8 --
--
mA
0.4 -- -- 1.00
V µs µA
© 2002 Fairchild Semiconductor Corporation
Page 2 of 4
3/5/02 DS300350
PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113
TYPICAL PERFORMANCE CURVES
Fig. 1 Forward Voltage vs. Forward Current
1.60
QRB1114
Fig. 2 Normalized Collector Current vs. Forward Current
10.0
Fig. 3 Normalized Collector Current vs. Temperature
1.00
IC - COLLECTOR CURRENT (mA)
1.40
IC - COLLECTOR CURRENT (mA)
VF - FORWARD VOLTAGE (V)
1.20 1.00 0.80 0.60 0.40 0.20 0.1 1.0 10 100
1.00
0.8
0.6
0.10
0.4
0.01
0.2
VCE = 5 V D = .05"
.001 0.0 10 20 30 40 50
IF = 10 m,A VCE = 5 V
0 -50 -25 0 25 50 75
IF - FORWARD CURRENT (mA)
IF - FORWARD CURRENT (mA)
TA - AMBIENT TEMPERATURE (°C)
Fig. 4 Normalized Collector Dark Current vs. Temperature
102
ICEO - COLLECTOR DARK CURRENT
Fig. 5 Normalized Collector Current vs. Distance
NORMALIZED COLLECTOR CURRENT (mA)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 50 100 150 200 250 300 350 400 450 500
101
VCE = 10 V
10
IF = 20 m,A VCE = 5 V
1.0
10-1
10-2
10-3 50 -25 0 25 50 75 100
DISTANCE IN MILS TA - AMBIENT TEMPERATURE (°C)
© 2002 Fairchild Semiconductor Corporation
Page 3 of 4
3/5/02 DS300350
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