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Details, datasheet, quote on part number:RMPA2265
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Datasheet text preview:
RMPA2265
July 2004
RMPA2265
28dBm WCDMA Power Amplifier Module
General Description
The RMPA2265 power amplifier module (PAM) is designed for WCDMA applications. The 2 stage PAM is internally matched to 50 to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process.
Features
· Single positive-supply operation with low power and shutdown modes · 40% WCDMA efficiency at +28dBm average output power · Compact, low-profile package (3.0 x 3.0 x 1.0mm nominal) · Internally matched to 50 and DC blocked RF input/ output · Meets UMTS/WCDMA performance requirements
Function Block Diagram
PA MODULE MMIC Vcc1 1 Input Match Output Match 8 Vcc2 (Top View)
RF IN
2
7
RF OUT
Vmode
3
DC Bias Control
6
GND
Vref
4
5
GND
(paddle ground on Package bottom)
Signal Description
Pin # 1 2 3 4 5 6 7 8 9 Signal Name Vcc1 RF In Vmode Vref GND GND RF Out Vcc2 GND Description Supply Voltage to Input Stage RF Input Signal High Power/Low Power Switch Reference Voltage Ground Ground RF Output Signal Supply Voltage to Output Stage Ground
©2004 Fairchild Semiconductor Corporation
RMPA2265 Rev. C
RMPA2265
Absolute Ratings 1
Symbol VCC1, VCC2 VREF VMODE PIN TSTG Parameter Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature Ratings 5.0 2.6 to 3.5 3.5 +10 -55 to +150 Units V V V dBm °C
Note: 1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics1
Symbol f Parameter Operating Frequency Test Conditions Min 1920 Typ Max 1980 Units MHz
WCDMA Operation
SSg Gp Po PAEd Small-Signal Gain Power Gain Linear Output Power PAE (digital) @ +28dBM PAE (digital) @ +16dBM PAEd (digital) @ +16dBM High Power Total Current Low Power Total Current Adjacent Channel Leakage Ratio ±5.00MHz Offset ±10.00MHz Offset Po = 0dBm Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode 2.0V Vmode = 0V Vmode 2.0V Vmode = 0V Vmode 2.0V Vmode 2.0V, Vcc = 1.4V Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode = 2.0V 26 28 16 40 9 25 460 130 26 28 24 dB dB dB dBm dBm % % % mA mA
Itot
ACLR1 ACLR2
Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode 2.0V Po = +28dBm, Vmode = 0V Po = +16dBm, Vmode 2.0V
-40 -46 -54 -66
dBc dBc dBc dBc
General Characteristics
VSWR NF Rx No 2fo 5fo S Input Impedance Noise Figure Receive Band Noise Power Harmonic Suppression Spurious Outputs2, 3 Ruggedness with Load Mismatch3 Case Operating Temperature 2.0:1 4 -139 -50 -60 10:1 -30 85 °C dB dBm/Hz dBc dBc
Po +28dBm, 2110 to 2170 MHz Po +28dBm Load VSWR 5.0:1 No permanent damage
Tc
DC Characteristics
Iccq Iref Icc(off) Quiescent Current Reference Current Shutdown Leakage Current Vmode 2.0V Po +28dBm No applied RF signal 55 5 1 mA mA µA
5
Notes: 1: All parameters met at TC = +25°C, VCC = +3.4V, VREF = 2.85V and load VSWR 1.2:1, unless otherwise noted. 2: All phase angles 3: Guaranteed by design
©2004 Fairchild Semiconductor Corporation
RMPA2265 Rev. C
RMPA2265
Recommended Operating Conditions
Symbol f VCC1, VCC2 VREF Parameter Operating Frequency Supply Voltage Reference Voltage Operating Shutdown Bias Control Voltage Low-Power High-Power Linear Output Power Low-Power High-Power Case Operating Temperature Min 1920 3.0 2.7 0 1.8 0 Typ 3.4 2.85 Max 1980 4.2 3.1 0.5 3.0 0.5 +28 +16 +85 Units MHz V V V V V dBm dBm °C
VMODE
2.0
POUT
TC
-30
©2004 Fairchild Semiconductor Corporation
RMPA2265 Rev. C
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