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Details, datasheet, quote on part number:RMPA2451
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Datasheet text preview:
RMPA2451
April 2004
RMPA2451
2.42.5 GHz GaAs MMIC Power Amplifier
General Description
Fairchild Semiconductor's RMPA2451 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for linear, class AB or class F for high efficiency applications. External matching components are required to optimize the RF performance. The MMIC chip design utilizes our 0.25µm power Pseudomorphic High Electron Mobility (PHEMT) process.
Features
· 38% power added efficiency · 29dBm typical output power · Small package outline: 0.28" x 0.28" x 0.07" · Low power mode: 0 dBm
Device
Absolute Ratings
Symbol Vd1, Vd2 Vg1, Vg2 VdVg PIN Id1 Id2 Ig TC TCASE TSTG RJC Parameter Positive Drain DC Voltage Negative Gate DC Voltage Simultaneous Drain to Gate Voltage RF Input Power (from 50 source) Drain Current, First Stage Drain Current, Second Stage Gate Current Channel Temperature Operating Case Temperature Storage Temperature Range Thermal Resistance (Channel to Case) Min 0 -5 Max +8 0 +10 +10 75 525 5 175 85 125 33 Units V V V dBm mA mA mA °C °C °C °C/W
-40 -40
©2004 Fairchild Semiconductor Corporation
RMPA2451 Rev. B
RMPA2451
Electrical Characteristics1
Parameter Frequency Range Gain1 Output Power, P1dB1 Power Added Efficiency 3rd order Intermod. Product2 Drain Current (Id1 + Id2) Gate Current (Ig1 + Ig2) Input Return Loss (50W) Low Power Mode, Pout3 Min 2400 28.5 27 Typ 33 29 38 -35 430 2:1 0 Max 2500 Units MHz dB dBm % dBc mA mA dB dBm
-27 5
Notes: 1. Production Testing includes Gain, Output Power at1-dB gain compression (P1dB) and Input Return Loss at Vd1 = Vd2 = +5.0; Vg1, Vg2 = -0.5V (nominal), adjust Vg1 and Vg2 to get Idq1 = 60mA, Idq2 = 340mA and at F = 2.45GHz, at 25°C. 2. Two tone 3rd order Output Intermodulation products (IM3) are measured with total output power level of 25dBm (tone spacing is 1MHz). 3. Vg1, Vg2 tied together. Vd = 5V until Idq total = 45 mA, Pin = -10dBm. Other Parameters are guaranteed by Design Validation Testing (DVT)
©2004 Fairchild Semiconductor Corporation
RMPA2451 Rev. B
RMPA2451
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. The following describes the procedure for evaluating the RMPA2451, a partially-matched PHEMT monolithic power amplifier which has been designed for wireless applications in the 2.4 - 2.5 GHz ISM band, in a surface mount package. The package outline, along with the pin designations, is provided as Figure 1. The functional block diagram of the packaged product is provided as Figure 2. It should be noted that the RMPA2451 requires the use of external passive components to form the DC bias and RF output matching circuits. The schematic for a recommended DC bias / RF matching circuit is shown in Figure 3, along with a list of the appropriate components. Figure 4 illustrates the layout of an evaluation board based on this schematic (RMPA2451-TB). Figures 5 and 6 illustrate typical device performance. This data for various operating parameters was obtained across the design bandwidth over a range of temperatures. Figure 5 shows the variation in Gain and P1dB with temperature and operating frequency. Figure 6 shows the 3rd-order intermodulation product measured at different total output power levels.
Top View
0.200 SQ.
6 5 4
Bottom View
4 5 6
7
3 2
0.015
3 7 8 9 2 1
0.030
8
9
1
0.020 0.011
10 11 12
12 11 10
0.041
Plastic Lid
0.008 0.015 0.282
Pin 1 2 3 4 5 6 7 8 9 10 11 12 Base
Description Vd2 + RF Out Vd2 + RF Out Vd2 + RF Out GND Vd1 GND GND RF IN GND Vg1 Vg2 GND GND
0.075 MAX
Side Section
Dimensions in inches
Figure 1. Package Information
©2004 Fairchild Semiconductor Corporation
RMPA2451 Rev. B
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