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Details, datasheet, quote on part number:RMPA2550
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Datasheet text preview:
RMPA2550
August 2004
RMPA2550
2.42.5 GHz and 5.155.85 GHz Dual Band InGaP HBT Linear Power Amplifier
General Description
The RMPA2550 is a dual frequency band power amplifier designed for high performance WLAN applications in the 2.4-2.5 GHz and the 5.15-5.85 GHz frequency bands. The single low profile 20 pin 3 x 4 x 0.9 mm package with internal matching on both input and output to 50 minimizes next level PCB space and allows for simplified integration. The two on-chip detectors provide power sensing capability while the logic control provides power saving shutdown options. The PA's low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. · 27 dB modulated gain 5.15 to 5.85 GHz band · 26 dBm output power @ 1 dB compression both frequency bands · 2.0% EVM at 18 dBm modulated Pout, 2.45 GHz · 2.3% EVM at 18 dBm modulated Pout, 5.45 GHz · 3.3 V single positive supply operation · Adjustable bias current operation · Two power saving shutdown options (bias and logic control) · Separate integrated power detectors with 20 dB dynamic range · Low profile 20 pin, 3 x 4 x 0.9 mm standard Device QFN leadless package · Internally matched to 50 ohms · Optimized for use in 802.11a/b/g applications
Features
· Dual band operation in a single package design · 26 dB modulated gain 2.4 to 2.5 GHz band
Electrical Characteristics1,3 802.11g/a OFDM
Modulation (with 176 µs burst time, 100µs idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth
Parameter Frequency Supply Voltage Gain Total Current @ 18dBm POUT Total Current @ 19dBm POUT EVM @ 18dBm POUT2 EVM @ 19dBm POUT2 Detector Output @ 19dBm POUT Detector Threshold4 POUT Spectral Mask Compliance5,7 Minimum 2.4 3.0 24.5 Typical 3.3 26 150 157 2.0 3.0 508 5.0 21.0 Maximum 2.5 3.6 28 182 189 2.5 3.5 600 7.0 Minimum 5.15 3.0 25.5 Typical 3.3 27 228 235 2.5 3.5 780 5.0 21.0 Maximum 5.85 3.6 29 260 267 3.5 4.5 865 7.0 Unit GHz V dB mA mA % % mV dBm dBm
Electrical Characteristics3,6 802.11b CCK
Modulation (RF not framed) 11Mbps Data Rate, 22.0 MHz Bandwidth
Parameter Frequency Supply Voltage Gain Total Current First Sidelobe Power Second Sidelobe Power Max POUT Spectral Mask Compliance7 Minimum 2.4 3.0 24.5 Typical 3.3 26 250 Maximum 2.5 3.6 28 -40 -55 24.0 Unit GHz V dB mA dBc dBc dBm
Notes: 1: VC1 2.4 ,VC2 2.4, VM 2.4, VC1 5.0, VC2 5.0, VC3 5.0, VM13 5.0, VM2 5.0 = 3.3 Volts, T=25°C, PA is constantly biased, 50 system. VL adjusted for either 2.4 or 5 GHz operation. 2: Percentage includes system noise floor of EVM=0.8%. 3: Not measured 100% in production. 4: POUT measured at PIN corresponding to power detection threshold. 5: Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied. 6: VC1 2.4, VC2 2.4, VM 2.4 = 3.3 Volts, T=25°C, POUT =+23 dBm, 50 system. Satisfies spectral mask. 7: PIN is adjusted to point where performance approaches spectral mask requirements.
©2004 Fairchild Semiconductor Corporation RMPA2550 Rev. D
RMPA2550
Electrical Characteristics1 Single Tone
Parameter Frequency Supply Voltage Gain2 Total Quiescent Current2 Bias Current at pin VM3 P1dB Compression2 Current @ P1dB Comp2 Standby Current4 Shutdown Current (VM=0V) Input Return Loss Output Return Loss Detector Output at P1dB Comp Detector POUT Threshold9 2nd Harmonic Output at P1dB 3rd Harmonic Output at P1dB Logic Shutdown Control Pin: Device Off Device On Logic Current Turn-on Time5 Turn-off Time Spurious (Stability)6 Minimum 2.4 3.0 24 70 25 Typical 3.3 26 120 13.5 26 350 0.5 <1.0 15 12 2.0 7.0 -45 -42 VL 2.4 2.4 0.0 10 <1 <1 -65 Maximum 2.5 3.6 29 150 18.0 475 Minimum 5.15 3.0 24 150 24 Typical 3.3 27.5 180 15.5 26 400 2 100 14 16 3.0 7.0 -30 -35 VL 5.0 0.0 2.4 100 <1 <1 -65 Maximum 5.85 3.6 31 225 Unit GHz V dB mA mA dBm mA mA µA dB dB V dBm dBc dBc
475
9.0
9.0
2.0
0.8
0.8
2.0
V V µA µS µS dBc
Notes: 1: VC1 2.4 ,VC2 2.4, VM 2.4, VC1 5.0, VC2 5.0, VC3 5.0, VM13 5.0, VM2 5.0 = 3.3 Volts, T=25°C, PA is constantly biased, 50 system. VL adjusted for either 2.4 or 5 GHz operation. 2: 100% production screened. 3: Bias current is included in the Total Quiescent Current. 4: VL is set to Logic Level for Device Off operation. 5: Measured from Device On signal turn on, to the point where RF POUT stabilizes to 0.5dB. 6: Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB. 7: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. 8: Not measured in production. 9: POUT measured at PIN corresponding to power detection threshold.
Absolute Ratings1
Symbol VC IC2.4, IC5.0 Parameter Positive Supply Voltage Supply Current IC2.4 IC5.0 Positive Bias Voltage Logic Voltage RF Input Power Case Operating Temperature Storage Temperature Value 5 820 700 4.0 5 10 -40 to +85 -55 to +150 Units V mA mA V V dBm °C °C
VM VL PIN TCASE TSTG
Note: 1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
©2004 Fairchild Semiconductor Corporation
RMPA2550 Rev. D
RMPA2550
Functional Block Diagram
BIAS
DETECTOR
INPUT MATCH
5.0 GHz PA
OUTPUT MATCH
BIAS
INPUT MATCH
2.4 GHz PA
OUTPUT MATCH
DETECTOR
BIAS
Backside Ground
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Description VM 2.4 DT2 2.4 DT1 2.4 (Vdet) VC2 2.4 N/C RF OUT 2.4 N/C N/C RF OUT 5.0 DT1 5.0 (Vdet) VC3 5.0 VC2 5.0 VM2 5.0 VL 5.0 VM13 5.0 VC1 5.0 RF IN 5.0 VC1 2.4 RF IN 2.4 VL 2.4
©2004 Fairchild Semiconductor Corporation
RMPA2550 Rev. D
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