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Details, datasheet, quote on part number:RMPA39000
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Datasheet text preview:
RMPA39000
June 2004
RMPA39000
3740 GHz GaAs MMIC Power Amplifier
General Description
The Fairchild Semiconductor RMPA39000 is a high efficiency power amplifier designed for use in point to point and point to multi-point radios, and various communications applications. The RMPA39000 is a 3-stage GaAs MMIC amplifier utilizing our advanced 0.15µm gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output.
Features
· 24dB small signal gain (typ.) · 29dBm saturated power out (typ.) · Circuit contains individual source vias · Chip size 4.28mm x 2.90mm x 50µm
Device
Absolute Ratings
Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+5V Typical) Negative DC Voltage Simultaneous (VdVg) Positive DC Current RF Input Power (from 50 source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 +8 1092 +20 -30 to +85 -55 to +125 17 Units V V V mA dBm °C °C °C/W
©2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
RMPA39000
Electrical Characteristics 50 system, Vd = +5V, Quiescent current (Idq) = 700mA
Parameter Frequency Range Gain Supply Voltage (Vg)1 Gain Small Signal at Pin = 0dBm Gain Variation vs. Frequency Power Output at 1dB Compression Power Output Saturated (Pin = +13dBm) Drain Current at Pin = 0dBm Drain Current at P1dB Compression Drain Current at Psat (Pin = +13dBm) Power Added Efficiency (PAE) at P1dB OIP3 (17dBm/Tone) (10 MHz Tone Sep.) Input Return Loss (Pin = -10dBm) Output Return Loss (Pin = -10dBm)
Note: 1. Typical range of the negative gate voltage is -0.5V to 0.0V to set typical Idq of 700mA.
Min 37 20
Typ -0.15 24 ±1 28 29 700 730 750 17 36 8 7
Max 40
27.5
Units GHz V dB dB dBm dBm mA mA mA % dBm dB dB
©2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D
RMPA39000
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 12 mils long corresponding to a typical 2 mil gap between the chip and the substrate material.
DRAIN SUPPLY (Vd = +5V) (VDA & VDB)
MMIC CHIP
RF IN RF OUT
GROUND (Back of the Chip)
GATE SUPPLY (VGA & VGB)
Figure 1. Functional Block Diagram
2.490 2.580 2.598
1.655 1.475 1.295
0.370
0.352 0.0 0.0 0.102 0.202 4.002 4.280 4.141
Dimensions in mm
Figure 2. Chip Layout and Bond Pad Locations (Chip Size is 4.28mm x 2.90mm x 50µm. Back of chip is RF and DC Ground)
©2004 Fairchild Semiconductor Corporation RMPA39000 Rev. D
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