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Details, datasheet, quote on part number:RMWP23001
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Datasheet text preview:
RMWP23001
June 2004
RMWP23001
2124 GHz Power Amplifier MMIC
General Description
The RMWP23001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 24 GHz Power Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild Semiconductor amplifiers, multipliers and mixers it forms part of a complete 23 GHz transmit/receive chipset. The RMWP23001 utilizes our 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of power amplifier applications.
Features
· 4mil substrate · Small-signal gain 22.5dB (typ.) · 1dB compressed Pout 23.5dBm (typ.) · Chip size 2.6mm x 1.2mm
Device
Absolute Ratings
Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Negative DC Voltage Simultaneous (VdVg) Positive DC Current RF Input Power (from 50 source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 8 607 +8 -30 to +85 -55 to +125 36.5 Units V V V mA dBm °C °C °C/W
©2004 Fairchild Semiconductor Corporation
RMWP23001 Rev. C
RMWP23001
Electrical Characteristics (At 25°C), 50 system, Vd = +4V, Quiescent Currrent Idq = 400mA
Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal at Pin = -8dBm Gain Variation vs. Frequency Gain at 1dB Compression Power Output at 1dB Compression Power Output Saturated: Pin = +3dBm Drain Current at Pin = -8dBm Drain Current at 1dB Compression Drain Current at Saturated: Pin = +3dBm Power Added Efficiency (PAE): at P1dB Input Return Loss (Pin = -8dBm) Output Return Loss (Pin = -8dBm) OIP3 Noise Figure
Note: 1. Typical range of gate voltage is -0.7 to -0.05V to set Idq of 400mA.
Min 21 20
Typ -0.3 22.5 1.0 21.5 24 25 400 430 410 15 14 12 33 8
Max 24
22
Units GHz V dB dB dB dBm dBm mA mA mA % dB dB dBm dB
©2004 Fairchild Semiconductor Corporation
RMWP23001 Rev. C
RMWP23001
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material.
DRAIN DRAIN SUPPLY SUPPLY Vd1 Vd2 DRAIN SUPPLY Vd3 DRAIN SUPPLY Vd4
MMIC CHIP
RF IN
RF OUT
GROUND (Back of the Chip)
GATE SUPPLY Vg
Note: 1. Typical range of gate voltage is -0.7 to -0.05V to set Idq of 400mA.
Figure 1. Functional Block Diagram
0.0
0.82
1.072
1.756
2.076
2.6
1.2
1.2
0.791 0.637 0.482 0.685 0.53 0.376
0.0 0.0 0.55 2.6
0.0
Dimensions in mm
Figure 2. Chip Layout and Bond Pad Locations (Chip Size is 2.6mm x 1.2mm x 100µm. Back of chip is RF and DC Ground)
©2004 Fairchild Semiconductor Corporation
RMWP23001 Rev. C
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