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Details, datasheet, quote on part number:RMWP38001
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Datasheet text preview:
RMWP38001
June 2004
RMWP38001
3740 GHz Power Amplifier MMIC
General Description
The RMWP38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Power Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild Semiconductor amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWP38001 utilizes our 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of power amplifier applications.
Features
· 4mil substrate · Small-signal gain 22dB (typ.) · 1dB compressed Pout 22dBm (typ.) · Chip size 3.4mm x 1.4mm
Device
Absolute Ratings
Symbol Vd Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Simultaneous (VdVg) Positive DC Current RF Input Power (from 50 source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 8 483 +8 -30 to +85 -55 to +125 46 Units V V mA dBm °C °C °C/W
©2004 Fairchild Semiconductor Corporation
RMWP38001 Rev. C
RMWP38001
Electrical Characteristics (At 25°C), 50 system, Vd = +4V, Quiescent Currrent Idq = 250mA
Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal at Pin = -10dBm Gain Variation vs. Frequency Gain at 1dB Compression Power Output at 1dB Compression Power Output Saturated: Pin = +5dBm Drain Current at Pin = -10dBm Drain Current at 1dB Compression Drain Current at Saturated: Pin = +5dBm Power Added Efficiency (PAE): at P1dB Input Return Loss (Pin = -10dBm) Output Return Loss (Pin = -10dBm) OIP3 Noise Figure Detector Voltage (Pout = +15dBm) (Bias Current = 0.020.05mA)
Note: 1. Typical range of gate voltage is -2.0 to 0V to set Idq of 250mA.
Min 37 18
Typ -0.5 22 4 21 22 23.5 250 280 270 15 12 7 30 6 0.15
Max 40
21
Units GHz V dB dB dB dBm dBm mA mA mA % dB dB dBm dB V
©2004 Fairchild Semiconductor Corporation
RMWP38001 Rev. C
RMWP38001
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material.
DRAIN DRAIN SUPPLY SUPPLY Vd1 Vd2 DRAIN SUPPLY Vd3 DRAIN SUPPLY Vd4 REFERENCE DETECTOR VOLTAGE Vref (not connected to circuit)
MMIC CHIP
RF IN
RF OUT
GROUND (Back of the Chip)
GATE SUPPLY Vg
OUTPUT POWER DETECTOR VOLTAGE Vdet
Note: For output power level detection, bias both detector and reference diodes. DC voltage difference between detector and reference can be used to measure output power after calibration. If output power level detection is not desired, do not make connection to detector bond pad.
Figure 1. Functional Block Diagram
0. 0 1. 4 0.545 1.0 5 1.5 5
3.0 375
3. 4 1. 4
0. 83 55 0. 68 6 0. 53 65
0. 83 15 0. 68 2 0. 53 25
0. 0 0. 0 0. 37 6 3. 4
0. 0
Dimensions in mm
Figure 2. Chip Layout and Bond Pad Locations (Chip Size is 3.4mm x 1.4mm. Back of chip is RF and DC Ground)
©2004 Fairchild Semiconductor Corporation RMWP38001 Rev. C
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