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Details, datasheet, quote on part number:RMWT04001
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Datasheet text preview:
RMWT04001
June 2004
RMWT04001
412 GHz Tripler MMIC
General Description
The RMWT04001 is a 4 to 12 GHz Tripler designed for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF Components amplifiers, multipliers and mixers it forms part of a complete 23, 26 and 38 GHz transmit/ receive chipset. The RMWT04001 utilizes our 0.25 µm power PHEMT process and is sufficiently versatile to serve in a variety of multiplier applications.
Features
· 4 mil substrate · Conversion loss 14dB (typ.) · No DC bias required · Chip size 1.8mm x 1.05mm
Device
Absolute Ratings
Symbol PIN TC Tstg Parameter RF Input Power (from 50 source) Operating Baseplate Temperature Storage Temperature Range Ratings +25 -30 to +85 -55 to +125 Units dBm °C °C
Electrical Characteristics (At 25°C), 50 system, Pin = +18 dBm
Parameter Input Frequency Range Output Frequency Range Input Drive Power Conversion Loss Conversion Loss Variation vs Freq Fundamental Rejection 2nd Harmonic Rejection 4th Harmonic Rejection 5th Harmonic Rejection Input Return Loss (Pin = +18dBm) Min 2.8 8.4 +16 Typ Max 4.0 12.0 16.5 Units GHz GHz dBm dB dB dBc dBc dBc dBc dB
+18 14 0.7 -25 -20 -20 -30 10
©2004 Fairchild Semiconductor Corporation
RMWT04001 Rev. D
RMWT04001
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material.
MMIC CHIP RF IN X3 RF OUT
GROUND (Back of Chip)
Figure 1. Functional Block Diagram
0.0 1.05
1.8 1.05
0.592
0.592
0.448
0.448
0.0 0.0 Dimensions in mm 1.8
0.0
Figure 2. Chip Layout and Bond Pad Locations (Chip Size is 1.8mm x 1.05mm x 100µm. Back of chip is RF and DC Ground)
©2004 Fairchild Semiconductor Corporation
RMWT04001 Rev. D
RMWT04001
5 MIL THICK ALUMINA 50
DIE-ATTACH 80Au/20Sn
5 MIL THICK ALUMINA 50
RF INPUT
RF OUTPUT
2 MIL GAP L < 0.015" (2 Places)
Note: Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Figure 3. Recommended Application Schematic Circuit Diagram
Recommended Procedure for Operation
The following sequence must be followed to properly test the amplifier. Step 1: The RMWT04001 does not require DC bias. Apply RF input signal at the appropriate frequency band and input drive level. Step 2: Follow turn-off sequence of: Turn off RF input power.
©2004 Fairchild Semiconductor Corporation
RMWT04001 Rev. D
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