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Details, datasheet, quote on part number:RMWW12001
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Datasheet text preview:
RMWW12001
June 2004
RMWW12001
1224 GHz Doubler MMIC
General Description
Fairchild Semiconductor's RMWW12001 is a 12 to 24 GHz Doubler designed for use in point to point and point to multipoint radios, and various communications applications. In conjunction with other Fairchild Semiconductor's amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz transmit/receive chipset. The RMWW12001 utilizes our 0.25 µm power PHEMT process and is sufficiently versatile to serve in a variety of multiplier applications.
Features
· 4 mil substrate · Conversion loss 10 dB (typ.) · No DC bias required · Chip size 1.5mm x 2.5mm
Device
Absolute Ratings
Symbol PIN TC TSTG Parameter RF Input Power (from 50 source) Operating Baseplate Temperature Storage Temperature Range Ratings +22 -30 to +85 -55 to +125 Units dBm °C °C
Electrical Characteristics (At 25°C), 50 system, Pin = +18dBm
Parameter Input Frequency Range Output Frequency Range Input Drive Power Conversion Loss Conversion Loss Variation vs. Frequency Fundamental Rejection 3rd Harmonic Rejection 4th Harmonic Rejection 5th Harmonic Rejection Input Return Loss (Pin = +18dBm) Min 8.5 17 +16 Typ Max 12 24 12.5 Units GHz GHz dBm dB dB dBc dBc dBc dBc dB
+18 10 2 -20 -25 -25 -35 12
©2004 Fairchild Semiconductor Corporation
RMWW12001 Rev. C
RMWW12001
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material. MMIC CHIP
RF IN
X2
RF OUT
GROUND (Back of the Chip)
Figure 1. Functional Block Diagram
©2004 Fairchild Semiconductor Corporation
RMWW12001 Rev. C
RMWW12001
0.0 2.5 2.345 2.2025
1.5 2.5
1.7165 1.56 1.4035
0.0
0.0
0.0 Dimensions in mm
1.5
Figure 2. Chip Layout and Bond Pad Locations (Chip Size is 1.5mm x 2.5mm x 100µm. Back of chip is RF Ground)
©2004 Fairchild Semiconductor Corporation
RMWW12001 Rev. C
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