Details, datasheet, quote on part number: SSW1N60A
DescriptionAdvanced Power Mosfet
CompanyFairchild Semiconductor
DatasheetDownload SSW1N60A datasheet
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Features, Applications

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Low RDS(ON) : 9.390 (Typ.)

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current C ) Continuous Drain Current C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation ) * Total Power Dissipation C ) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds

Symbol R JA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 40 62.5

* When mounted on the minimum pad size recommended (PCB Mount).

Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( "Miller" ) Charge Min. Typ. Max. Units --nC V nA

Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Test Condition Integral reverse pn-diode in the MOSFET diF/dt=100A/ s

Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature =27 , Starting AS DD ISD _ 1A, di/dt < 60A/ s, VDD < BVDSS , Starting _ 2% Pulse Test : Pulse Width = 250 s, Duty Cycle 4 O Essentially Independent of Operating Temperature 5 O


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