Details, datasheet, quote on part number: SSW1N60B
Description600V N-channel B-FET / Substitute of SSW1N60A
CompanyFairchild Semiconductor
DatasheetDownload SSW1N60B datasheet
Find where to buy


Features, Applications

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.


1.0A, 600V, RDS(on) = 12 @VGS 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA 25C) *

Power Dissipation (TC 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8! from case for 5 seconds

Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 40 62.5 Units C/W

* When mounted on the minimum pad size recommended (PCB Mount)

BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 250 A, Referenced to 25C VDS 600 V, VGS 0 V VDS = 125C VGS 30 V, VDS 0 V VGS -30 V, VDS V/C A nA

VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, 250 A VGS 0.5 A VDS 0.5 A

Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS 25 V, VGS = 1.0 MHz pF

td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS 1.0 A, VGS 10 V

IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS 1.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS 1.0 A, dIF = 100 A/s

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature = 92mH, IAS = 1.0A, VDD 25 , Starting 25C 3. ISD " 1.0A, di/dt " 300A/s, VDD " BVDSS, Starting 25C 4. Pulse Test : Pulse width " 300s, Duty cycle 2% 5. Essentially independent of operating temperature

Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature


Some Part number from the same manufacture Fairchild Semiconductor
SSW2N60A Advanced Power MOSFET
SSW2N60B 600V N-channel B-FET / Substitute of SSW2N60A
SSW2N80A Advanced Power MOSFET
SSW4N60B 600V N-channel B-FET / Substitute of SSW4N60A
SSW4N80A Advanced Power MOSFET
SSW6N70A N-channel Power MOSFET
SSW7N60A Advanced Power MOSFET
SSW7N60B 600V N-channel B-FET / Substitute of SSW7N60A
ST5771 PNP Switching Transistor
ST5771-1 Small Signal Transistor
ST57711 1 - PNP Switching Transistor
TDA1170 TV Vertical Deflection Systems

100328 : Bipolar->ECL 100 Family Low Power Ecl/ttl Bi-directional Translator With Latch

FDS6570A : Single N-channel 2.5V Specified PowerTrench® MOSFET

FMS9874X100 :

FQU17P06 : Enhancement P-Channel 60V P-channel QFET

NM93C46LMT8 : 1024-bit Serial CMOS Eeprom (microwire Synchronous Bus)

IRF630AJ69Z : 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.4000 ohms ; Package Type: TO-220, TO-220, 3 PIN ; Number of units in IC: 1

NDC651ND87Z : 3200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0600 ohms ; Package Type: SUPERSOT-6 ; Number of units in IC: 1

74ACTQ273CW : ACT SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, UUC20 Specifications: Technology: CMOS ; Device Type: Line / Bus Driver ; Supply Voltage: 5V ; Package Type: DIE ; Pins: 20

Same catergory

BCR12CM-12 : Type = Triac ;; Voltage = 600V ;; Current = 12A ;; Package = Obsolete.

CS51311 : Synchronous Cpu Buck Controller For 12v And 5v Applications. The is a synchronous dual NFET Buck Regulator Controller. It is designed to power the core logic of the latest high performance CPUs. It uses the V2TM control method to achieve the fastest possible transient response and best overall regulation. It incorporates many additional required to ensure the proper operation and protection of the CPU and Power.

54FCT : Octal D Flip-flop. The 'FCT273 has eight edge-triggered D-type flip-flops with individual D inputs and Q outputs The common buffered Clock (CP) and Master Reset (MR) input load and reset (clear) all flip-flops simultaneously The register is fully edge-triggered The state of each D input one setup time before the LOW-to-HIGH clock transition is transferred to the corresponding.

SDHP10KM : Standard Recovery HIGH Voltage Doubler AND Center TAPS.

GQM1875C2E240JB12D : 24pF Ceramic Capacitor 0603 (1608 Metric) 250V; CAP CER 24PF 250V C0G SMD. s: Capacitance: 24pF ; Voltage - Rated: 250V ; Tolerance: 5% ; Package / Case: 0603 (1608 Metric) ; Temperature Coefficient: C0G, NP0 ; Packaging: Tape & Reel (TR) ; : High Q, Low Loss ; Lead Spacing: - ; Operating Temperature: -55C ~ 125C ; Mounting Type: Surface Mount,.

MPX10D : Board Mount Pressure Sensors PRES SEN UNCOMP 10KPA. » » » Pressure / Force Sensors Pressure / Force Sensors A pressure sensor transducer generates an electronic signal as a function of the pressure imposed. Pressure sensors are used for control and monitoring in thousands of everyday applications. s: Manufacturer: Freescale Semiconductor.

GCC35DRSD-S273 : Gold Through Hole Card Edge, Edgeboard Connector Connectors, Interconnect Non Specified - Dual Edge; CONN EDGECARD 70POS DIP .100 SLD. s: Card Thickness: 0.093" (2.36mm) ; Card Type: Non Specified - Dual Edge ; Contact Finish: Gold ; Mounting Type: Through Hole ; : - ; Number of Positions: 70 ; Number of Rows: 2 ; Pitch: 0.100" (2.54mm) ; Packaging:.

059303.5U : Fuse - Specialty, Electrical Circuit Protection 3.5A 250VAC Slow Blow, Time Lag; FUSE 3.5A 250VAC 10X38 SLOW. s: Current: 3.5A ; Voltage - Rated: 250VAC ; Package / Case: Cylindrical, 5AG, Midget, 10x38mm ; Fuse Type: Slow Blow, Time Lag ; Mounting Type: Holder ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant.

E-TDA7560A : Linear - Amplifier - Audio Integrated Circuit (ics) Class AB Tube 8 V ~ 18 V; IC AMP AUDIO PWR 80W FLEXIWATT27. s: Package / Case: 27-Flexiwatt (bent and staggered leads) ; Type: Class AB ; Output Type: 4-Channel (Quad) ; Voltage - Supply: 8 V ~ 18 V ; Packaging: Tube ; : Mute, Short-Circuit and Thermal Protection, Standby ; Max Output Power x Channels.

RG1005V-221-C-T10 : 220 Ohm 0.063W, 1/16W Chip Resistor - Surface Mount; RES 220 OHM 1/16W .25% 0402. s: Resistance (Ohms): 220 ; Power (Watts): 0.063W, 1/16W ; Tolerance: 0.25% ; Packaging: Tape & Reel (TR) ; Composition: Thin Film ; Temperature Coefficient: 5ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant.

ERJ-P06J180V : 18 Ohm 0.25W, 1/4W Chip Resistor - Surface Mount; RES ANTI-SURGE 18 OHM 5% 0805. s: Resistance (Ohms): 18 ; Power (Watts): 0.25W, 1/4W ; Tolerance: 5% ; Packaging: Cut Tape (CT) ; Composition: Thick Film ; Temperature Coefficient: 300ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant.

163CMQ100 : Diodes, Rectifier Semiconductor Module; DIODE SCHOTTKY 100V 160A TO249AA. s: Diode Type: Schottky ; Diode Configuration: 1 Pair Common Cathode ; Voltage - DC Reverse (Vr) (Max): 100V ; Current - Average Rectified (Io) (per Diode): 160A ; Voltage - Forward (Vf) (Max) @ If: 1.17V @ 160A ; Current - Reverse Leakage @ Vr: 1.5mA @ 100V ; Reverse Recovery.

EKV00DC147O00K : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 350 V, 4.7 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 4.7 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 350 volts ; Leakage Current: 57.9 microamps ; ESR: 68000 milliohms ; Mounting Style: Through Hole ; Operating.

TPD3S716-Q1EVM : Power Management IC Development Tools TPD3S716-Q1 Evaluation Module for USB 2.0 Interface w/ Short-to-Battery and Short-to-GND Protection. s: Manufacturer: Texas Instruments ; Product Category: Power Management IC Development Tools ; Product: Evaluation Modules ; Type: Current Monitors & Regulators ; Tool Is For Evaluation Of: TPD3S716-Q1 ; Input Voltage:.

0-C     D-L     M-R     S-Z