Details, datasheet, quote on part number: SSW3N80A
PartSSW3N80A
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
DescriptionAdvanced Power MOSFET
CompanyFairchild Semiconductor
DatasheetDownload SSW3N80A datasheet
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Features, Applications
FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 3.800 (Typ.)

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation C) *

Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds

Symbol R JA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. ---Max. 40 62.5
* When mounted on the minimum pad size recommended (PCB Mount).
Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd

Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge

Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Test Condition Integral reverse pn-diode in the MOSFET C,IF=3A diF/dt=100A/µs

Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature R G=27, Starting O _3A, di/dt < _100A/ µs, VDD _ BV DSS , Starting C 3 ISD < O Pulse Test : Pulse Width = 250 µs, Duty Cycle O 5 Essentially Independent of Operating Temperature O



 

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